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2SC323 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC323
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 125 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 90
   Paquete / Cubierta: TO18

 Búsqueda de reemplazo de transistor bipolar 2SC323

 

2SC323 Datasheet (PDF)

 0.1. Size:112K  1
2sc3236.pdf

2SC323
2SC323

 0.2. Size:121K  1
2sc3239.pdf

2SC323
2SC323

 0.3. Size:150K  toshiba
2sc3233.pdf

2SC323
2SC323

2SC3233 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3233 Switching Regulator and High Voltage Switching Unit: mm Applications High Speed DC-DC Converter Applications Excellent switching times: tr = 1.0 s (max) t = 1.0 s (max), (I = 0.8 A) f C High collector breakdown voltage: V = 400 V CEOMaximum Ratings (Ta = 25C) Characteristics Symbol Rating

 0.4. Size:184K  inchange semiconductor
2sc3235.pdf

2SC323
2SC323

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3235DESCRIPTIONLow Collector Saturation VoltageHigh switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially suited for high voltage,high speed andhigh power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 0.5. Size:193K  inchange semiconductor
2sc3231.pdf

2SC323
2SC323

isc Silicon NPN Power Transistor 2SC3231DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 60V(Min)(BR)CEOLarge Current CapabilityHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

 0.6. Size:198K  inchange semiconductor
2sc3230.pdf

2SC323
2SC323

isc Silicon NPN Power Transistor 2SC3230DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 30V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1276Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SA1210R

 

 
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History: 2SA1210R

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