2SC3271
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3271
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5
W
Tensión colector-base (Vcb): 300
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 135
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80
MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO126
Búsqueda de reemplazo de transistor bipolar 2SC3271
2SC3271
Datasheet (PDF)
0.1. Size:61K rohm
2sc3271f.pdf 
2SC4061K / 2SC3415S / 2SC4015 / 2SC3271FTransistorsChroma Amplifier Transistor (300V, 0.1A)2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F Features External dimensions (Units: mm)1) High breakdown voltage. (BVCEO=300V)2SC4061K2) Low collector output capacitance. (Typ. 3pF at VCB=30V)3) Ideal for chroma circuit.1.62.8(1) Emitter(Source)(2) Base(Gate)(3) Collector(Drain)0.3
8.1. Size:205K toshiba
2sc3279.pdf
2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications High DC current gain and excellent hFE linearity : h = 140~600 (V = 1 V, I = 0.5 A) FE (1) CE C: h = 70 (min), 200 (typ.) (V = 1 V, I = 2 A) FE (2) CE C Low saturation voltage: V = 0.5 V (max) CE (sat)(I = 2 A, I = 5
8.2. Size:101K sanyo
2sc3277.pdf
Ordering number:EN1207ANPN Triple Diffused Planar Silicon Transistor2SC3277400V/10A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high current.unit:mm Wide ASO.2022A Fast switching speed.[2SC3277]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi
8.5. Size:269K mcc
2sc3279-n.pdf
2SC3279-LMCCTM Micro Commercial Components2SC3279-M20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC3279-NPhone: (818) 701-49332SC3279-PFax: (818) 701-4939Features High DC Current Gain and excellent hFE LinearityNPN Siliconh =140-600 (V =1.0V, I =0.5A)FE(1) CE ChFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)Epitaxial Transistors E
8.6. Size:269K mcc
2sc3279-m.pdf
2SC3279-LMCCTM Micro Commercial Components2SC3279-M20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC3279-NPhone: (818) 701-49332SC3279-PFax: (818) 701-4939Features High DC Current Gain and excellent hFE LinearityNPN Siliconh =140-600 (V =1.0V, I =0.5A)FE(1) CE ChFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)Epitaxial Transistors E
8.7. Size:269K mcc
2sc3279-l.pdf
2SC3279-LMCCTM Micro Commercial Components2SC3279-M20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC3279-NPhone: (818) 701-49332SC3279-PFax: (818) 701-4939Features High DC Current Gain and excellent hFE LinearityNPN Siliconh =140-600 (V =1.0V, I =0.5A)FE(1) CE ChFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)Epitaxial Transistors E
8.8. Size:269K mcc
2sc3279-p.pdf
2SC3279-LMCCTM Micro Commercial Components2SC3279-M20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC3279-NPhone: (818) 701-49332SC3279-PFax: (818) 701-4939Features High DC Current Gain and excellent hFE LinearityNPN Siliconh =140-600 (V =1.0V, I =0.5A)FE(1) CE ChFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)Epitaxial Transistors E
8.9. Size:289K secos
2sc3279.pdf
2SC3279 2A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC current gain and excellent hFE linearity. G H Low saturation voltage. 1Emitter 1112Collector 222333J 3Base CLASSIFICATION OF hFE A DMillimeter REF. Product-Rank 2SC32
8.10. Size:425K jiangsu
2sc3279.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SC3279 TRANSISTOR (NPN)TO-92 FEATURES High DC current gain and excellent hFE linearity1. EMITTER Low saturation voltage2. COLLECTOR3. BASE Equivalent Circuit 2SC3279=Device code 2SC Solid dot=Green molding compound device, 3279 if none,the normal deviceZ Z=Ra
8.11. Size:274K lge
2sc3279 to-92.pdf
2SC3279(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE FeaturesHigh DC current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and (mi
8.12. Size:214K foshan
2sc3279 3da3279.pdf
2SC3279(3DA3279) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power amplifier applications. : Features: High DC current gain and excellent h linearity, low saturation voltage. FE/Absolute maximum ratings(Ta=25) Symbol
8.13. Size:196K inchange semiconductor
2sc3272.pdf
isc Silicon NPN Power Transistor 2SC3272DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in color TV chroma output and videosignal amplification.ABSOLUTE MAXIMUM RATINGS(T =25)a
8.14. Size:202K inchange semiconductor
2sc3277.pdf
isc Silicon NPN Power Transistor 2SC3277DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
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