2SC3285 Todos los transistores

 ..1. Size:198K  inchange semiconductor
 2sc3285.pdf

isc Silicon NPN Power Transistor 2SC3285 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Speed Switching Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector

 8.1. Size:134K  mospec
 2sc3281.pdf

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 8.2. Size:25K  wingshing
 2sc3280.pdf

2SC3280 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A High Current Capability High Power Dissipation Complementary to 2SA1301 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 12 A Collec

 8.3. Size:190K  jmnic
 2sc3281.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3281 DESCRIPTION With TO-3PL package Complement to type 2SA1302 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3

 8.4. Size:28K  sanken-ele
 2sc3284.pdf

LAPT 2SC3284 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303) Application Audio and General Purpose (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions MT-100(TO3P) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 4.8 0.4 15.6 0.1 VCBO 150 ICBO VCB=150V 100max A 9.6 2.0 V VCEO 150 IEBO VEB=5V 100max

 8.5. Size:202K  inchange semiconductor
 2sc3280.pdf

isc Silicon NPN Power Transistor 2SC3280 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 8A CE(sat) C Complement to Type 2SA1301 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity au

 8.6. Size:202K  inchange semiconductor
 2sc3281.pdf

isc Silicon NPN Power Transistor 2SC3281 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 3.0V(Max)@ I = 10A, I = 1A CE(sat) C B High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fid

 8.7. Size:202K  inchange semiconductor
 2sc3284.pdf

isc Silicon NPN Power Transistor 2SC3284 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1303 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU