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2SC3298Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC3298Y
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 25 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar 2SC3298Y

 

2SC3298Y Datasheet (PDF)

 7.1. Size:397K  motorola
2sa1306b 2sc3298b.pdf

2SC3298Y
2SC3298Y

 7.2. Size:109K  toshiba
2sc3298b.pdf

2SC3298Y
2SC3298Y

 7.3. Size:159K  jmnic
2sc3298 2sc3298a 2sc3298b.pdf

2SC3298Y
2SC3298Y

Product Specification www.jmnic.com Silicon Power Transistors 2SC3298 2SC3298A 2SC3298B DESCRIPTION With TO-220Fa package Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIO

 7.4. Size:215K  inchange semiconductor
2sc3298-a-b.pdf

2SC3298Y
2SC3298Y

isc Silicon NPN Power Transistors 2SC3298/A/BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)-2SC3298(BR)CEO= 180V(Min)-2SC3298A= 200V(Min)-2SC3298BComplement to Type 2SA1306/A/BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplif

 7.5. Size:214K  inchange semiconductor
2sc3298b.pdf

2SC3298Y
2SC3298Y

isc Silicon NPN Power Transistors 2SC3298BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = 200V(Min)(BR)CEOComplement to Type 2SA1306BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYM

 7.6. Size:198K  inchange semiconductor
2sc3298 2sc3298a 2sc3298b.pdf

2SC3298Y
2SC3298Y

isc Silicon NPN Power Transistor 2SC3298 A BDESCRIPTIONWith TO-220F packagingComplement to Type 2SA1306 A BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT2SC3298 160V Collector-Base Voltage 2

 7.7. Size:189K  inchange semiconductor
2sc3298 2sc3298a.pdf

2SC3298Y
2SC3298Y

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC3298/ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)-2SC3298(BR)CEO= 180V(Min)-2SC3298AComplement to Type 2SA1306/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifie

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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