2SC3300 Todos los transistores

 ..1. Size:173K  cn sptech
 2sc3300.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3300 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 5A CE(sat) C APPLICATIONS Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 ..2. Size:197K  inchange semiconductor
 2sc3300.pdf

isc Silicon NPN Power Transistor 2SC3300 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE

 8.1. Size:245K  1
 2sc3308.pdf

 8.2. Size:227K  toshiba
 2sc3306.pdf

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 2sc3309.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.4. Size:218K  toshiba
 2sc3307.pdf

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 2sc3303.pdf

2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 Industrial Applications High Current Switching Applications Unit mm DC-DC Converter Applications Low collector saturation voltage VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time tstg = 1.0 s (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Col

 8.6. Size:1637K  toshiba
 2sc3302.pdf

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 2sc3306.pdf

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 8.8. Size:509K  jiangsu
 2sc3303.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SC3303 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Low Collector Saturation Voltage High Speed Switching Time 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltag

 8.9. Size:211K  inchange semiconductor
 2sc3306.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3306 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applicat

 8.10. Size:196K  inchange semiconductor
 2sc3309.pdf

isc Silicon NPN Power Transistor 2SC3309 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.11. Size:217K  inchange semiconductor
 2sc3307.pdf

isc Silicon NPN Power Transistor 2SC3307 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed and high voltage switching applications. Switching regulator applications. High speed DC-DC converter applications. ABSOLUTE M

 8.12. Size:218K  inchange semiconductor
 2sc3303.pdf

isc Silicon NPN Power Transistor 2SC3303 DESCRIPTION High switching speed time Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base