2SC3307 Todos los transistores

isc Silicon NPN Power Transistor 2SC3307 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed and high voltage switching applications. Switching regulator applications. High speed DC-DC converter applications. ABSOLUTE M

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 Industrial Applications High Current Switching Applications Unit mm DC-DC Converter Applications Low collector saturation voltage VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time tstg = 1.0 s (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Col

A A A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SC3303 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Low Collector Saturation Voltage High Speed Switching Time 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltag

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3300 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 5A CE(sat) C APPLICATIONS Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3306 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applicat

isc Silicon NPN Power Transistor 2SC3309 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc Silicon NPN Power Transistor 2SC3303 DESCRIPTION High switching speed time Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

isc Silicon NPN Power Transistor 2SC3300 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE