2SC3317 Todos los transistores

 

2SC3317 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC3317
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 500 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 45
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar 2SC3317

 

2SC3317 Datasheet (PDF)

 ..1. Size:193K  inchange semiconductor
2sc3317.pdf

2SC3317
2SC3317

isc Silicon NPN Power Transistor 2SC3317DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)

 8.1. Size:263K  1
2sc3311 2sc3311a.pdf

2SC3317
2SC3317

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request

 8.2. Size:44K  toshiba
2sc3310.pdf

2SC3317

This Material Copyrighted By Its Respective Manufacturer

 8.3. Size:37K  panasonic
2sc3313.pdf

2SC3317
2SC3317

Transistor2SC3313Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit 1 2 3Collector to base voltage VCBO 30 VCollector to emitter voltage VCE

 8.4. Size:48K  panasonic
2sc3315 e.pdf

2SC3317
2SC3317

Transistor2SC3315Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V

 8.5. Size:45K  panasonic
2sc3314.pdf

2SC3317
2SC3317

Transistor2SC3314Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA13234.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector t

 8.6. Size:36K  panasonic
2sc3311.pdf

2SC3317
2SC3317

Transistor2SC3311ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SA1309A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 60 VCollector to emitter voltage VCEO 50 VEmitter to

 8.7. Size:37K  panasonic
2sc3312.pdf

2SC3317
2SC3317

Transistor2SC3312Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA13104.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit 1 2 3Collector to base voltage VCBO 60 VCollector to emit

 8.8. Size:40K  panasonic
2sc3313 e.pdf

2SC3317
2SC3317

Transistor2SC3313Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit 1 2 3Collector to base voltage VCBO 30 VCollector to emitter voltage VCE

 8.9. Size:40K  panasonic
2sc3311a e.pdf

2SC3317
2SC3317

Transistor2SC3311ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SA1309A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 60 VCollector to emitter voltage VCEO 50 VEmitter to

 8.10. Size:44K  panasonic
2sc3315.pdf

2SC3317
2SC3317

Transistor2SC3315Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V

 8.11. Size:41K  panasonic
2sc3312 e.pdf

2SC3317
2SC3317

Transistor2SC3312Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA13104.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit 1 2 3Collector to base voltage VCBO 60 VCollector to emit

 8.12. Size:49K  panasonic
2sc3314 e.pdf

2SC3317
2SC3317

Transistor2SC3314Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA13234.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector t

 8.13. Size:216K  fuji
2sc3318.pdf

2SC3317
2SC3317

FUJI POWER TRANSISTOR2SC3318TRIPLE DIFFUSED PLANER TYPEHIGH VOLTAGE,HIGH SPEED SWITCHINGOutline DrawingsTO-3PFeaturesHigh voltage,High speed switchingHigh reliabilityApplicationsSwitching regulatorsUltrasonic generatorsHigh frequency invertersJEDEC -General purpose power amplifiers EIAJ SC-65Maximum ratings and characteristicsAbsolute maximum ratings (Tc=25C

 8.14. Size:110K  jiangsu
2sc3311a.pdf

2SC3317

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC3311A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Optimum for High-density Mounting 3. BASE Allowing Supply with the Radial Taping Complementary to 2SA1309A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Vo

 8.15. Size:219K  inchange semiconductor
2sc3318.pdf

2SC3317
2SC3317

isc Silicon NPN Power Transistor 2SC3318DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

 8.16. Size:196K  inchange semiconductor
2sc3310.pdf

2SC3317
2SC3317

isc Silicon NPN Power Transistor 2SC3310DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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