2SC3322 Todos los transistores

 ..1. Size:45K  hitachi
 2sc3322.pdf

2SC3322 Silicon NPN Tirple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 900 V Collector to emitter voltage VCEO 800 V Emitter to base voltage VEBO 7V Collector current IC 5A Collector peak curre

 ..2. Size:116K  inchange semiconductor
 2sc3322.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3322 DESCRIPTION With TO-3P(I) package High voltage High speed APPLICATIONS High power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL P

 8.1. Size:199K  toshiba
 2sc3327.pdf

 8.2. Size:577K  toshiba
 2sc3326a 2sc3326b.pdf

2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications Unit mm AEC-Q101 Qualified (Note1). High emitter-base voltage V = 25 V EBO High reverse h Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance R = 1 (typ.) (I = 5 mA) ON B High DC current gain h = 200 to 1200 F

 8.3. Size:196K  toshiba
 2sc3325.pdf

2SC3325 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3325 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) High voltage V = 50 V (min) CEO Complementary to 2SA1313 Small package Maximum Ratings (Ta =

 8.4. Size:309K  toshiba
 2sc3324gr 2sc3324bl.pdf

2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3324 Audio Frequency Low Noise Amplifier Applications Unit mm High voltage VCEO = 120 V Excellent hFE linearity hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 200 to 700 Low noise NF (2) = 0.2dB (typ.), 3dB (max) Complementary to 2SA1312 Small package Abs

 8.5. Size:271K  toshiba
 2sc3324.pdf

2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3324 Audio Frequency Low Noise Amplifier Applications Unit mm High voltage VCEO = 120 V Excellent hFE linearity hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 200 700 Low noise NF (2) = 0.2dB (typ.), 3dB (max) Complementary to 2SA1312 Small package Absolu

 8.6. Size:320K  toshiba
 2sc3329.pdf

2SC3329 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3329 For Low Noise Audio Amplifier Applications and Unit mm Recommended for The First Stages of MC Head Amplifiers Very low noise in the region of low signal source impedance equivalent input noise voltage En = 0.6 nV/Hz1/2 (typ.) Low pulse noise. Low 1/f noise Low base spreading resistance

 8.7. Size:214K  toshiba
 2sc3328.pdf

 8.8. Size:181K  toshiba
 2sc3325o 2sc3325y.pdf

2SC3325 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3325 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) High voltage VCEO = 50 V (min) Complementary to 2SA1313 Small package Absolute Maximum Ratings

 8.9. Size:280K  toshiba
 2sc3326.pdf

2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications Unit mm High emitter-base voltage VEBO = 25 V (min) High reverse h Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance R = 1 (typ.) (I = 5 mA) ON B High DC current gain hFE = 200 1200 Small package Maximum Ra

 8.10. Size:191K  utc
 2sc3320.pdf

UNISONIC TECHNOLOGIES CO.,LTD 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3320L-x-T3P-T 2SC3320L-x-T3P-T TO-3P B C E Tube 2SC3320L-x-T3N-T 2SC3320L-x-T3N-T TO-3PN B C E T

 8.11. Size:109K  fuji
 2sc3320.pdf

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 8.12. Size:230K  nell
 2sc3320b.pdf

RoHS RoHS 2SC3320B SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 15A/400V/150W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 High-speed switching B C E High collector to base voltage, VCBO Satisfactory linearity of fow

 8.13. Size:1062K  kexin
 2sc3325.pdf

SMD Type Transistors NPN Transistors 2SC3325 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High voltage VCEO = 50 V (min) Small package 1 2 Complementary to 2SA1313 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Co

 8.14. Size:2812K  kexin
 2sc3324.pdf

SMD Type Transistors NPN Transistors 2SC3324 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=120V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 Complementary to 2SA1312 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

 8.15. Size:1066K  kexin
 2sc3326.pdf

SMD Type Transistors NPN Transistors 2SC3326 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=300mA Collector Emitter Voltage VCEO=20V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collecto

 8.16. Size:1299K  cn sps
 2sc3320t4tl.pdf

2SC3320T4TL Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V

 8.17. Size:427K  cn sptech
 2sc3320.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3320 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 8.18. Size:199K  inchange semiconductor
 2sc3320.pdf

isc Silicon NPN Power Transistor 2SC3320 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI