2SC3331T Todos los transistores

 7.1. Size:451K  sanyo
 2sc3331.pdf

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 8.1. Size:288K  toshiba
 2sc3333.pdf

2SC3333 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3333 High Voltage Switching Applications Unit mm Color TV Chroma Output Applications High voltage VCEO = 250 V Low C 1.8 pF (max) re Complementary to 2SA1320 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 250 V Collector-emitt

 8.2. Size:211K  toshiba
 2sc3334.pdf

 8.3. Size:97K  sanyo
 2sc3332.pdf

 8.4. Size:144K  sanyo
 2sa1317 2sc3330.pdf

 8.5. Size:41K  hitachi
 2sc3336.pdf

2SC3336 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2SC3336 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Collector current IC 15 A Collector

 8.6. Size:24K  hitachi
 2sc3338.pdf

2SC3338 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC3338 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 12 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipa

 8.7. Size:903K  blue-rocket-elect
 2sc3330m.pdf

2SC3330M(BR3DG3330M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Large current capacity and wide ASO. / Applications Capable of being used in the low frequency to hi

 8.8. Size:304K  kexin
 2sc3338.pdf

SMD Type Transistors NPN Transistors 2SC3338 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VE

 8.9. Size:212K  inchange semiconductor
 2sc3336.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3336 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO