2SC3339 Todos los transistores

 8.1. Size:288K  toshiba
 2sc3333.pdf

2SC3333 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3333 High Voltage Switching Applications Unit mm Color TV Chroma Output Applications High voltage VCEO = 250 V Low C 1.8 pF (max) re Complementary to 2SA1320 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 250 V Collector-emitt

 8.2. Size:211K  toshiba
 2sc3334.pdf

 8.3. Size:451K  sanyo
 2sc3331.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.4. Size:97K  sanyo
 2sc3332.pdf

 8.5. Size:144K  sanyo
 2sa1317 2sc3330.pdf

 8.6. Size:41K  hitachi
 2sc3336.pdf

2SC3336 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2SC3336 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Collector current IC 15 A Collector

 8.7. Size:24K  hitachi
 2sc3338.pdf

2SC3338 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC3338 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 12 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipa

 8.8. Size:903K  blue-rocket-elect
 2sc3330m.pdf

2SC3330M(BR3DG3330M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Large current capacity and wide ASO. / Applications Capable of being used in the low frequency to hi

 8.9. Size:304K  kexin
 2sc3338.pdf

SMD Type Transistors NPN Transistors 2SC3338 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VE

 8.10. Size:212K  inchange semiconductor
 2sc3336.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3336 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO