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2SC3345 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC3345
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 45 MHz
   Capacitancia de salida (Cc): 180 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar 2SC3345

 

2SC3345 Datasheet (PDF)

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2sc3345.pdf

2SC3345 2SC3345

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2sc3345.pdf

2SC3345 2SC3345

isc Silicon NPN Power Transistor 2SC3345DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I =6ACE(sat) CHigh Speed Switching Time; t = 1.0sstgComplement to Type 2SA1328Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMB

 8.1. Size:129K  toshiba
2sc3346.pdf

2SC3345 2SC3345

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.2. Size:199K  inchange semiconductor
2sc3346.pdf

2SC3345 2SC3345

isc Silicon NPN Power Transistors 2SC3346DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I =6ACE(sat) CHigh Speed Switching Time: t = 1.0sstgComplement to Type 2SA1329Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 9.1. Size:263K  1
2sc3311 2sc3311a.pdf

2SC3345 2SC3345

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request

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2sc3306.pdf

2SC3345 2SC3345

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2sc3327.pdf

2SC3345 2SC3345

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2sc3333.pdf

2SC3345 2SC3345

2SC3333 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3333 High Voltage Switching Applications Unit: mm Color TV Chroma Output Applications High voltage: VCEO = 250 V Low C : 1.8 pF (max) re Complementary to 2SA1320 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 250 VCollector-emitt

 9.5. Size:577K  toshiba
2sc3326a 2sc3326b.pdf

2SC3345 2SC3345

2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications Unit: mm AEC-Q101 Qualified (Note1). High emitter-base voltage: V = 25 V EBO High reverse h : Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance: R = 1 (typ.) (I = 5 mA) ON B High DC current gain: h = 200 to 1200 F

 9.6. Size:133K  toshiba
2sc3309.pdf

2SC3345 2SC3345

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.7. Size:196K  toshiba
2sc3325.pdf

2SC3345 2SC3345

2SC3325 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3325 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) High voltage: V = 50 V (min) CEO Complementary to 2SA1313 Small package Maximum Ratings (Ta =

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2sc3307.pdf

2SC3345 2SC3345

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2sc3324gr 2sc3324bl.pdf

2SC3345 2SC3345

2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3324 Audio Frequency Low Noise Amplifier Applications Unit: mm High voltage: VCEO = 120 V Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 200 to 700 Low noise: NF (2) = 0.2dB (typ.), 3dB (max) Complementary to 2SA1312 Small package Abs

 9.10. Size:271K  toshiba
2sc3324.pdf

2SC3345 2SC3345

2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3324 Audio Frequency Low Noise Amplifier Applications Unit: mm High voltage: VCEO = 120 V Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 200~700 Low noise: NF (2) = 0.2dB (typ.), 3dB (max) Complementary to 2SA1312 Small package Absolu

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2sc3334.pdf

2SC3345 2SC3345

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2sc3329.pdf

2SC3345 2SC3345

2SC3329 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3329 For Low Noise Audio Amplifier Applications and Unit: mm Recommended for The First Stages of MC Head Amplifiers Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) Low pulse noise. Low 1/f noise Low base spreading resistance

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2sc3328.pdf

2SC3345 2SC3345

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2sc3325o 2sc3325y.pdf

2SC3345 2SC3345

2SC3325 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3325 Audio Frequency Low Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications Switching Applications Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) High voltage: VCEO = 50 V (min) Complementary to 2SA1313 Small package Absolute Maximum Ratings

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2sc3381.pdf

2SC3345 2SC3345

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2sc3376.pdf

2SC3345 2SC3345

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2sc3303.pdf

2SC3345 2SC3345

2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 Industrial Applications High Current Switching Applications Unit: mmDC-DC Converter Applications Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time: tstg = 1.0 s (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCol

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2sc3302.pdf

2SC3345 2SC3345

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2sc3326.pdf

2SC3345 2SC3345

2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V (min) High reverse h : Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance: R = 1 (typ.) (I = 5 mA) ON B High DC current gain: hFE = 200~1200 Small package Maximum Ra

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2sc3310.pdf

2SC3345

This Material Copyrighted By Its Respective Manufacturer

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2sa1391 2sc3382.pdf

2SC3345 2SC3345

Ordering number:EN1942APNP/NPN Epitaxial Planar Silicon Transistors2SA1391/2SC3382Low Noise AF Amp ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp.2003A Low-noise use.[2SA1391/2SC3382]Noise Test CircuitJEDEC : TO-92 B : Base( ) : 2SA1391EIAJ : SC-43 C : CollectorSANYO : NP E : EmitterSpecificationsAbsolute Maximum Rating

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2sa1345 2sc3399.pdf

2SC3345 2SC3345

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2sc3397.pdf

2SC3345 2SC3345

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.24. Size:173K  sanyo
2sa1392 2sc3383.pdf

2SC3345 2SC3345

Ordering number:EN1943APNP/NPN Epitaxial Planar Silicon Transistors2SA1392/2SC3383AF Amp ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp.2003A[2SA1392/2SC3383]JEDEC : TO-92 B : Base( ) : 2SA1392EIAJ : SC-43 C : CollectorSANYO : NF E : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratin

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2sc3331.pdf

2SC3345 2SC3345

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.26. Size:128K  sanyo
2sa1331 2sc3361.pdf

2SC3345 2SC3345

Ordering number:EN3217PNP/NPN Epitaxial Planar Silicon Transistors2SA1331/2SC3361High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High breakdown voltage.2018A Small-sized package permitting the 2SA1331/[2SA1331/2SC3361]2SC3361-applied sets to be made small and slim.Switching Time Test CircuitC : CollectorB : Base(Fo

 9.27. Size:97K  sanyo
2sc3332.pdf

2SC3345 2SC3345

Ordering number:ENN1334DPNP/NPN Epitaxial Planar Silicon Transistors2SA1319/2SC3332High-Voltage Switching ApplicationsFeatures Package Dimensions Hgih breakdown voltage.unit:mm Excellent hFE linearity.2003B Wide ASO and highly resistant to breakdown.[2SA1319/2SC3332] Adoption of MBIT process.5.04.04.0Switching Test CircuitIB1PW=20sOUTPUTD.C.

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2sa1339 2sc3393.pdf

2SC3345 2SC3345

Ordering number:EN1392APNP/NPN Epitaxial Planar Silicon Transistors2SA1339/2SC3393High-Speed Switching ApplicationsFeatures Package Dimensions Very small-sized package permitting sets to be small-unit:mmsized, slim.2033 High breakdown voltage : VCEO=()50V.[2SA1339/2SC3393] Complementary pair transistor having large currentcapacity and high fT. Adoption o

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2sa1338 2sc3392.pdf

2SC3345 2SC3345

Ordering number:EN1421APNP/NPN Epitaxial Planar Silicon Transistors2SA1338/2SC3392High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage : VCEO=()50V.2018A Large current capacitiy and high fT.[2SA1338/2SC3392] Very small-sized package permitting sets to be small-sized, slim.Switching Time Test

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2sc3396.pdf

2SC3345 2SC3345

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2sa1317 2sc3330.pdf

2SC3345 2SC3345

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rej03g0713 2sc3380ds-1.pdf

2SC3345 2SC3345

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf

2SC3345 2SC3345

NEC's NPN SILICON HIGH NE856FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT:fT = 7 GHz LOW NOISE FIGURE:1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION35 (MICRO-X)00 (CHIP) LOW COSTDESCRIPTIONNEC's NE856 series of NPN epitaxial silicon transistors isdesigned for low cost amplifier and oscillator application

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2sc3355.pdf

2SC3345 2SC3345

DATA SHEETNPN SILICON RF TRANSISTOR2SC3355NPN EPITAXIAL SILICON RF TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONDESCRIPTIONThe 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.It has lange dynamic range and good current characteristic.FEATURES Low noise and high gainNF = 1.1 dB TYP., Ga = 8.0 dB TYP. @ VCE =

 9.35. Size:77K  nec
2sc3357.pdf

2SC3345 2SC3345

DATA SHEETSILICON TRANSISTOR2SC3357NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC3357 is an NPN silicon epitaxial transistor designed for(Unit: mm)low noise amplifier at VHF, UHF and CATV band.It has large dynamic range and good current characteristic.4.50.11.50.11.60.2FEATURES Low Noise and High GainNF = 1.1 dB TYP.,

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2sc3360.pdf

2SC3345 2SC3345

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2sc3356.pdf

2SC3345 2SC3345

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3356MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONPACKAGE DIMENSIONSThe 2SC3356 is an NPN silicon epitaxial transistor designed for low(Units: mm)noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic. 2.80.21.50.65+0.1-0.15FEATURES Low Noise and High G

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2sc1741as 2sc3359s 2sd1484.pdf

2SC3345

2SD1949 / 2SD1484K / 2SC1741STransistorsTransistors2SC3359S(96-678-D15)(SPEC-D16)318

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2sc3313.pdf

2SC3345 2SC3345

Transistor2SC3313Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit 1 2 3Collector to base voltage VCBO 30 VCollector to emitter voltage VCE

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2sc3315 e.pdf

2SC3345 2SC3345

Transistor2SC3315Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V

 9.41. Size:45K  panasonic
2sc3314.pdf

2SC3345 2SC3345

Transistor2SC3314Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA13234.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector t

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2sc3311.pdf

2SC3345 2SC3345

Transistor2SC3311ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SA1309A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 60 VCollector to emitter voltage VCEO 50 VEmitter to

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2sc3353 2sc3353a.pdf

2SC3345 2SC3345

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2sc3312.pdf

2SC3345 2SC3345

Transistor2SC3312Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA13104.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit 1 2 3Collector to base voltage VCBO 60 VCollector to emit

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2sc3354.pdf

2SC3345 2SC3345

Transistor2SC3354Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage

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2sc3313 e.pdf

2SC3345 2SC3345

Transistor2SC3313Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit 1 2 3Collector to base voltage VCBO 30 VCollector to emitter voltage VCE

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2sc3311a e.pdf

2SC3345 2SC3345

Transistor2SC3311ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SA1309A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 60 VCollector to emitter voltage VCEO 50 VEmitter to

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2sc3354 e.pdf

2SC3345 2SC3345

Transistor2SC3354Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage

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2sc3315.pdf

2SC3345 2SC3345

Transistor2SC3315Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V

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2sc3312 e.pdf

2SC3345 2SC3345

Transistor2SC3312Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA13104.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit 1 2 3Collector to base voltage VCBO 60 VCollector to emit

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2sc3314 e.pdf

2SC3345 2SC3345

Transistor2SC3314Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA13234.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector t

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2sc3355.pdf

2SC3345 2SC3345

UNISONIC TECHNOLOGIES CO., LTD 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES 1* Low Noise and High Gain * High Power Gain TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3355L-T92-B 2SC3355G-T92-B TO-92 B E C Tape Box2SC3355L-T92-K 2SC3355G-T92-K TO-92 B E C Bulk

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2sc3358.pdf

2SC3345 2SC3345

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2sc3320.pdf

2SC3345 2SC3345

UNISONIC TECHNOLOGIES CO.,LTD 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3320L-x-T3P-T 2SC3320L-x-T3P-T TO-3P B C E Tube2SC3320L-x-T3N-T 2SC3320L-x-T3N-T TO-3PN B C E T

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2sc3356.pdf

2SC3345 2SC3345

UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER 332 2 DESCRIPTION 1 1The UTC 2SC3356 is designed for such applications as: DC/DC SOT-23-3 SOT-23 converters, supply line switching, battery charger, LCD backlighting, (JEDEC TO-236) (EIAJ SC-59)peripheral drivers, Driver in low supply voltage applications (e.g.lamps an

 9.56. Size:216K  fuji
2sc3318.pdf

2SC3345 2SC3345

FUJI POWER TRANSISTOR2SC3318TRIPLE DIFFUSED PLANER TYPEHIGH VOLTAGE,HIGH SPEED SWITCHINGOutline DrawingsTO-3PFeaturesHigh voltage,High speed switchingHigh reliabilityApplicationsSwitching regulatorsUltrasonic generatorsHigh frequency invertersJEDEC -General purpose power amplifiers EIAJ SC-65Maximum ratings and characteristicsAbsolute maximum ratings (Tc=25C

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2sc3320.pdf

2SC3345 2SC3345

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 9.58. Size:29K  hitachi
2sc3380.pdf

2SC3345 2SC3345

2SC3380Silicon NPN Triple DiffusedApplication High frequency high voltage amplifier High voltage switchOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SC3380Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VEBO 5VCollec

 9.59. Size:41K  hitachi
2sc3336.pdf

2SC3345 2SC3345

2SC3336Silicon NPN Triple DiffusedApplicationHigh voltage, high speed and high power switchingOutlineTO-3P1. Base2. Collector(Flange)3. Emitter1232SC3336Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 500 VCollector to emitter voltage VCEO 400 VEmitter to base voltage VEBO 10 VCollector current IC 15 ACollector

 9.60. Size:24K  hitachi
2sc3391.pdf

2SC3345 2SC3345

2SC3391Silicon NPN Epitaxial PlanarApplicationVHF amplifier, Mixer, Local oscillatorOutlineSPAK1. Emitter122. Collector33. Base2SC3391Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 20 mACollector power dissipation PC 20

 9.61. Size:24K  hitachi
2sc3338.pdf

2SC3345 2SC3345

2SC3338Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SC3338Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 12 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipa

 9.62. Size:24K  hitachi
2sc3390.pdf

2SC3345 2SC3345

2SC3390Silicon NPN EpitaxialApplication Low frequency low noise amplifier HF amplifierOutlineSPAK1. Emitter122. Collector33. Base2SC3390Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissip

 9.63. Size:41K  hitachi
2sc3365.pdf

2SC3345 2SC3345

2SC3365Silicon NPN Triple DiffusedApplicationHigh voltage, high speed and high power switchingOutlineTO-3P1. Base2. Collector(Flange)3. Emitter1232SC3365Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 500 VCollector to emitter voltage VCEO 400 VEmitter to base voltage VEBO 10 VCollector current IC 10 ACollector

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2sc3374.pdf

2SC3345

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2sc3322.pdf

2SC3345 2SC3345

2SC3322Silicon NPN Tirple DiffusedApplicationHigh voltage, high speed and high power switchingOutlineTO-3P1. Base 2. Collector (Flange) 3. Emitter123Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 900 VCollector to emitter voltage VCEO 800 VEmitter to base voltage VEBO 7VCollector current IC 5ACollector peak curre

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2sc3306.pdf

2SC3345 2SC3345

AAA

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2sc3369.pdf

2SC3345

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2sc3311a.pdf

2SC3345

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC3311A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Optimum for High-density Mounting 3. BASE Allowing Supply with the Radial Taping Complementary to 2SA1309A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Vo

 9.70. Size:509K  jiangsu
2sc3303.pdf

2SC3345 2SC3345

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SC3303 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Low Collector Saturation Voltage High Speed Switching Time2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltag

 9.71. Size:842K  jiangsu
2sc3356.pdf

2SC3345 2SC3345

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors2SC3356 TRANSISTOR (NPN)SOT23 FEATURES Low Noise and High Gain High Power GainMAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASESymbol Parameter Value Unit 2. EMITTERV Collector-Base Voltage 20 V CBO3. COLLECTORV Collector-Emitter Voltage 12 V CEOV Emitter-Bas

 9.72. Size:643K  htsemi
2sc3356.pdf

2SC3345 2SC3345

2SC3356 TRANSISTOR (NPN) FEATURES SOT-23 / SOT-23-3L Power dissipation PCM: 0.2 W (Tamb=25) Collector current 1. BASE ICM: 0.1 A 2. EMITTER Collector-base voltage 3. COLLECTOR V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test

 9.73. Size:277K  gsme
2sc3356.pdf

2SC3345 2SC3345

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM3356MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 12 VdcC

 9.74. Size:218K  lge
2sc3356 2sc3356 sot-23-3l.pdf

2SC3345 2SC3345

2SC3356 SOT-23-3L Transistor(NPN)SOT-23-3L1. BASE 2. EMITTER 2.923. COLLECTOR 0.351.17Features2.80 1.60 Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain 0.151.90Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 20 V VC

 9.75. Size:1092K  lge
2sc3356.pdf

2SC3345 2SC3345

2SC3356 Silicon Epitaxial Planar TransistorA SOT-23 Dim Min MaxFEATURES A 2.70 3.10E Low noise and high gain. B 1.10 1.50K BNF=1.1dB TYP.,Ga=11dB TYP. C 1.0 Typical@VCE=10V,IC=7mA, f=1.0GHz D 0.4 TypicalE 0.35 0.48J High power gain. MAG=13dB TYP. DG 1.80 2.00@VCE=10V,IC=20mA,f=1.0GHz. GH 0.02 0.1J 0.1 TypicalHK 2.20 2.60APPLICATIONSCAll Dime

 9.76. Size:402K  wietron
2sc3356.pdf

2SC3345 2SC3345

2SC3356High-Frequency Amplifier Transistor3NPN Silicon 1P b Lead(Pb)-Free2FEATURES1. BASE* Low noise amplifier at VHF, UHF and CATV band. 2. EMITTER3. COLLECTOR* Low Noise and High Gain* High Power GainSOT-23MAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVCBO Collector- Base Voltage 20 VVCEO Collector-Emitter Voltage 12 VVEBO Emi

 9.77. Size:903K  blue-rocket-elect
2sc3330m.pdf

2SC3345 2SC3345

2SC3330M(BR3DG3330M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Large current capacity and wide ASO. / Applications Capable of being used in the low frequency to hi

 9.78. Size:656K  blue-rocket-elect
2sc3356w.pdf

2SC3345 2SC3345

2SC3356W(BR3DG3356W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features Low noise and high power gain. / Applications low noise amplifier at VHF, UHF and C

 9.79. Size:140K  lrc
l2sc3356lt1g.pdf

2SC3345 2SC3345

DATA SHEETLESHAN RADIO COMPANY, LTD.L2SC3356LT1GDESCRIPTIONThe L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

 9.80. Size:140K  lrc
l2sc3356lt1g l2sc3356lt3g.pdf

2SC3345 2SC3345

DATA SHEETLESHAN RADIO COMPANY, LTD.L2SC3356LT1GDESCRIPTIONThe L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

 9.81. Size:167K  lrc
l2sc3356wt1g.pdf

2SC3345 2SC3345

DATA SHEETLESHAN RADIO COMPANY, LTD.DESCRIPTION L2SC3356WT1GThe L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic. 3S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

 9.82. Size:167K  lrc
l2sc3356wt1g l2sc3356wt3g.pdf

2SC3345 2SC3345

DATA SHEETLESHAN RADIO COMPANY, LTD.DESCRIPTION L2SC3356WT1GThe L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic. 3S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

 9.83. Size:230K  nell
2sc3320b.pdf

2SC3345 2SC3345

RoHS RoHS 2SC3320BSEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor(High voltage switching transistor)15A/400V/150W15.60.44.80.29.62.00.13.20,1TO-3P(B)23+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4High-speed switchingB C EHigh collector to base voltage, VCBOSatisfactory linearity of fow

 9.84. Size:1459K  kexin
2sc3361.pdf

2SC3345 2SC3345

SMD Type TransistorsNPN Transistors2SC3361SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Fast switching speed.1 2 High breakdown voltage.+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1331+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60

 9.85. Size:856K  kexin
2sc3380.pdf

2SC3345 2SC3345

SMD Type TransistorsNPN Transistors2SC3380SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=300V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag

 9.86. Size:1019K  kexin
2sc3357.pdf

2SC3345 2SC3345

SMD Type TransistorsNPN Transistors2SC33571.70 0.1 Features Low noise and high gain High power gain Large Ptot0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Conti

 9.87. Size:1217K  kexin
2sc3360.pdf

2SC3345 2SC3345

SMD Type TransistorsNPN Transistors2SC3360SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High voltage VCEO=200V1 2 High DC Current Gain hFE=90 to 450+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1 Complementary to 2SA13301.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage

 9.88. Size:2189K  kexin
2sc3397.pdf

2SC3345 2SC3345

SMD Type TransistorsNPN Transistors2SC3397SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 Complementary to 2SA1343 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

 9.89. Size:1062K  kexin
2sc3325.pdf

2SC3345 2SC3345

SMD Type TransistorsNPN Transistors2SC3325SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High voltage: VCEO = 50 V (min) Small package1 2 Complementary to 2SA1313+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Co

 9.90. Size:1547K  kexin
2sc3392.pdf

2SC3345 2SC3345

SMD Type TransistorsNPN Transistors2SC3392SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High breakdown voltage Large current capacitiy and high fT.1 2 High-Speed Switching Applications+0.1+0.050.95-0.1 0.1-0.01+0.1 Complementary to 2SA13381.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symb

 9.91. Size:2812K  kexin
2sc3324.pdf

2SC3345 2SC3345

SMD Type TransistorsNPN Transistors2SC3324SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=120V+0.1+0.050.95 -0.1 0.1-0.01+0.1 Complementary to 2SA1312 1.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

 9.92. Size:2363K  kexin
2sc3398.pdf

2SC3345 2SC3345

SMD Type TransistorsNPN Transistors2SC3398SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95 -0.1 0.1-0.01 Complementary to 2SA1344+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

 9.93. Size:304K  kexin
2sc3338.pdf

2SC3345

SMD Type TransistorsNPN Transistors2SC3338SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=12V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VE

 9.94. Size:2408K  kexin
2sc3396.pdf

2SC3345 2SC3345

SMD Type TransistorsNPN Transistors2SC3396SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1342+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

 9.95. Size:2169K  kexin
2sc3395.pdf

2SC3345 2SC3345

SMD Type TransistorsNPN Transistors2SC3395SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.1 Complementary to 2SA13411.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

 9.96. Size:1066K  kexin
2sc3326.pdf

2SC3345 2SC3345

SMD Type TransistorsNPN Transistors2SC3326SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=300mA Collector Emitter Voltage VCEO=20V 1 2+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collecto

 9.97. Size:1257K  kexin
2sc3356.pdf

2SC3345 2SC3345

SMD Type TransistorsSMD TypeNPN Transistors2SC3356SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesLow noise and high gain.NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz1 2High power gain. +0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz1.Base2.Emitter3.collectorAbsolute Maximum Rating

 9.98. Size:473K  globaltech semi
gst2sc3356.pdf

2SC3345 2SC3345

GST2SC3356 High-Frequency Amplifier Transistor NPN Silicon Product Description Features This device is designed as a general purpose Low noise amplifier at VHF, UHF and CATV amplifier and switch. band Low Noise and High Gain High Power Gain Lead(Pb)-FreePackages & Pin Assignments GST2SC3356F(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Informati

 9.99. Size:2026K  slkor
2sc3356b 2sc3356c 2sc3356d.pdf

2SC3345 2SC3345

2SC3356NPN2SC3356 NPN SOT-23 VHFUHF CATV :S21e2 12dB @ VCE=10

 9.100. Size:2447K  slkor
2sc3357a 2sc3357b 2sc3357c 2sc3357d.pdf

2SC3345 2SC3345

2SC3357NPN2SC3357 NPN SOT-89 VHFUHF CATV :S21e2 10 dB @ VCE=10V

 9.101. Size:1126K  anbon
2sc3356.pdf

2SC3345 2SC3345

2SC3356NPN Silicon Epitaxial TransistorFeaturesLow noise and high gain.NF = 1.1 dB Typ., Ga =11dBTyp. @VCE =10V, IC =7mA, f =1.0GHzHigh power gain.MAG = 13 dB Typ. @VCE =10V, IC =20mA, f =1.0GHzhFE ClassificationMarking R25PbRank ShFE 120 220Lead-free SOT-23 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO 20 VCollector

 9.102. Size:661K  jsmsemi
2sc3356-r25.pdf

2SC3345 2SC3345

2SC3356-R25Silicon Epitaxial Planar Transistor Silicon Epitaxial Planar Transistor 2SC3356-R25 FEATURES Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS SOT-23 Designed for low noise amplifier at VHF,UHF and CATV band. ORDERING INFORMATION Type No. Marking Package C

 9.103. Size:1949K  cn shikues
2sc3356s-b 2sc3356s-c 2sc3356s-d.pdf

2SC3345 2SC3345

2SC3356SNPN N RF TRAN SILICON ANSISTOR 3 U equency low sistor Ultra high fre w noise transSilicon epitax process. xial bipolar pH gain, low noHigh power g oise figure, hi c range and ideal current characterisigh dynamic n stics, 2 SOT-23 chip package, maip inly used in VHF, UHF and CATV hi cy wideband amplifier.igh frequenc d low noise a1 SOT-23

 9.104. Size:608K  cn shikues
2sc3356k-b 2sc3356k-c 2sc3356k-d.pdf

2SC3345 2SC3345

NPN N RF TRAN SILICON ANSISTOR 3 U equency low sistor Ultra high fre w noise transSilicon epitax process. xial bipolar pH gain, low noHigh power g oise figure, hi c range and ideal current characterisigh dynamic n stics, SC-59 chip p inly used in VHF, UHF and CATV 2 package, maii cy wideband amplifier.high frequenc d low noise a 1 SCC-59 Fea 1

 9.105. Size:364K  cn shikues
2sc3357a 2sc3357b 2sc3357c 2sc3357d 2sc3357e.pdf

2SC3345 2SC3345

NPN SILICON RF TRANSISTOR Feature High gain:S21e2 TYP. Value is 10dB @ VCE=10VIC=20mAf=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10VIC=7mAf=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10VIC=20mAf=1GHz PIN DEFINITION: 1 Collector 3Base 2 Emitter SOT-89 Absolute Maximum Ratings TA=25 Unless Otherwise noted PARAMETER SYM

 9.106. Size:1175K  cn yongyutai
2sc3356.pdf

2SC3345 2SC3345

2SC3356 TRANSISTOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: High transition frequency Small rbbCc and high gain. Small NF.ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitVCBOCollector-Base Voltage 20 VVCEOCollector-Emitter Voltage 11 VVEBOEmitter-Base Voltage 3 VICCollec

 9.107. Size:1299K  cn sps
2sc3320t4tl.pdf

2SC3345 2SC3345

2SC3320T4TLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 V

 9.108. Size:1157K  cn tech public
2sc3357.pdf

2SC3345 2SC3345

 9.109. Size:1499K  cn tech public
2sc3356.pdf

2SC3345 2SC3345

 9.110. Size:217K  cn fosan
2sc3356.pdf

2SC3345 2SC3345

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD2SC3356MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 12 VdcCollector-Base VoltageVCBO 20 VdcEmitter-Base VoltageVEBO Vdc3.0Colle

 9.111. Size:1029K  cn hottech
2sc3357.pdf

2SC3345 2SC3345

2SC3357NPN Silicon RF TransistorFEATURESLow Noise and High GainNF = 1.1 dB TYP., G = 8.0 dB TYP.a@V = 10 V, I = 7 mA, f = 1.0 GHzCE CNF = 1.8 dB TYP., G = 9.0 dB TYP.a@V = 10 V, I = 40 mA, f = 1.0 GHzCE CAPPLICATIONSSOT-89Designed for low noise amplifier at VHF, UHF and CATV band.MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammabil

 9.112. Size:797K  cn hottech
2sc3356.pdf

2SC3345 2SC3345

2SC3356BIPOLAR TRANSISTOR (NPN)FEATURES High power gain Low Noise For Low Noise Amplifier at UHF/VHF/CATV Band Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT- 23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbo

 9.113. Size:427K  cn sptech
2sc3320.pdf

2SC3345 2SC3345

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3320DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 9.114. Size:173K  cn sptech
2sc3300.pdf

2SC3345 2SC3345

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3300DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 5ACE(sat) CAPPLICATIONSDesigned for DC-DC converter, emergency lightinginverter and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 9.115. Size:601K  cn yw
2sc3356-sc1-r-r 2sc3356-sf3-r-r 2sc3356-sd3-r-r 2sc3356-t93-r-k.pdf

2SC3345 2SC3345

2SC3356 (NPN) High-Frequency Amplifier Transistor 1TO-92 3FEATURES 2* SOT231Low noise and high gain. NF=1.1dB Typ. f=1.0 GHz Ga=11dB Typ.@Vce=10V,Ic=7mA3* High power gain. 21MAG=13dB Typ.@Vce=10V,Ic=20mAf=1.0 GHz SOT-23-3L321SOT-5231:B 2:E 3:C

 9.116. Size:188K  inchange semiconductor
2sc3388.pdf

2SC3345 2SC3345

isc Silicon NPN Power Transistor 2SC3388DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 500V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

 9.117. Size:211K  inchange semiconductor
2sc3306.pdf

2SC3345 2SC3345

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3306DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switchingapplications.High speed DC-DC converter applicat

 9.118. Size:192K  inchange semiconductor
2sc3355.pdf

2SC3345 2SC3345

isc Silicon NPN RF Transistor 2SC3355DESCRIPTION Low NoiseNF = 1.5dB TYP @ VCE=10VIC=7mA f=1GHzHigh Power GainS21e2 = 9.5dB TYP @ VCE=10VIC=20mAf=1GHzMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC3355 is an NPN silicon epitaxial transistordesigned for low noise amplifier at VHF, UHF and CATV b

 9.119. Size:188K  inchange semiconductor
2sc3357.pdf

2SC3345 2SC3345

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3357DESCRIPTIONLow Noise and High GainNF = 1.1 dB TYP., G = 8.0 dB TYP.a@V = 10 V, I = 7 mA, f = 1.0 GHzCE CNF = 1.8 dB TYP., G = 9.0 dB TYP.a@V = 10 V, I = 40 mA, f = 1.0 GHzCE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned

 9.120. Size:196K  inchange semiconductor
2sc3352.pdf

2SC3345 2SC3345

isc Silicon NPN Power Transistor 2SC3352DESCRIPTION Collector-Emiiter Sustaining Voltage-: V = 500V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.0V(Max.)@ I = 1ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATI

 9.121. Size:196K  inchange semiconductor
2sc3309.pdf

2SC3345 2SC3345

isc Silicon NPN Power Transistor 2SC3309DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

 9.122. Size:219K  inchange semiconductor
2sc3318.pdf

2SC3345 2SC3345

isc Silicon NPN Power Transistor 2SC3318DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

 9.123. Size:212K  inchange semiconductor
2sc3336.pdf

2SC3345 2SC3345

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3336DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed and high powerswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 9.124. Size:197K  inchange semiconductor
2sc3353a.pdf

2SC3345 2SC3345

isc Silicon NPN Power Transistor 2SC3353ADESCRIPTION Collector-Emiiter Sustaining Voltage-: V = 500V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.0V(Max.)@ I = 3ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RAT

 9.125. Size:217K  inchange semiconductor
2sc3307.pdf

2SC3345 2SC3345

isc Silicon NPN Power Transistor 2SC3307DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed and high voltage switching applications.Switching regulator applications.High speed DC-DC converter applications.ABSOLUTE M

 9.126. Size:197K  inchange semiconductor
2sc3387.pdf

2SC3345 2SC3345

isc Silicon NPN Power Transistor 2SC3387DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 500V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

 9.127. Size:197K  inchange semiconductor
2sc3353.pdf

2SC3345 2SC3345

isc Silicon NPN Power Transistor 2SC3353DESCRIPTION Collector-Emiiter Sustaining Voltage-: V = 500V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.0V(Max.)@ I = 3ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATI

 9.128. Size:193K  inchange semiconductor
2sc3317.pdf

2SC3345 2SC3345

isc Silicon NPN Power Transistor 2SC3317DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)

 9.129. Size:197K  inchange semiconductor
2sc3376.pdf

2SC3345 2SC3345

isc Silicon NPN Power Transistor 2SC3376DESCRIPTION Collector-Emiiter Breakdown Voltage-: V = 800V(Min.)(BR)CEOHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS (T =25)a

 9.130. Size:217K  inchange semiconductor
2sc3365.pdf

2SC3345 2SC3345

isc Silicon NPN Power Transistor 2SC3365DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed and high powerswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 9.131. Size:218K  inchange semiconductor
2sc3303.pdf

2SC3345 2SC3345

isc Silicon NPN Power Transistor 2SC3303DESCRIPTIONHigh switching speed timeLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

 9.132. Size:189K  inchange semiconductor
2sc3371.pdf

2SC3345 2SC3345

isc Silicon NPN Power Transistor 2SC3371DESCRIPTION Collector-Emiiter Sustaining Voltage-: V = 500V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.0V(Max.)@ I = 8ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS (

 9.133. Size:116K  inchange semiconductor
2sc3322.pdf

2SC3345 2SC3345

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3322 DESCRIPTION With TO-3P(I) package High voltage High speed APPLICATIONS High power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL P

 9.134. Size:199K  inchange semiconductor
2sc3320.pdf

2SC3345 2SC3345

isc Silicon NPN Power Transistor 2SC3320DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

 9.135. Size:399K  inchange semiconductor
2sc3356.pdf

2SC3345 2SC3345

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3356DESCRIPTIONLow Noise and High GainNF = 1.1 dB TYP., G = 11 dB TYP.a@V = 10 V, I = 7 mA, f = 1.0 GHzCE CHigh Power GainMAG = 13 dB TYP.@V = 10 V, I = 20 mA, f = 1.0 GHzCE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low noise amplifier at

 9.136. Size:197K  inchange semiconductor
2sc3300.pdf

2SC3345 2SC3345

isc Silicon NPN Power Transistor 2SC3300DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for DC-DC converter, emergency lightinginverter and general purpose applicationsABSOLUTE

 9.137. Size:196K  inchange semiconductor
2sc3310.pdf

2SC3345 2SC3345

isc Silicon NPN Power Transistor 2SC3310DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D

 

 

 
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