2SC3356 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NEC's NPN SILICON HIGH NE856FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT:fT = 7 GHz LOW NOISE FIGURE:1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION35 (MICRO-X)00 (CHIP) LOW COSTDESCRIPTIONNEC's NE856 series of NPN epitaxial silicon transistors isdesigned for low cost amplifier and oscillator application

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3356MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONPACKAGE DIMENSIONSThe 2SC3356 is an NPN silicon epitaxial transistor designed for low(Units: mm)noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic. 2.80.21.50.65+0.1-0.15FEATURES Low Noise and High G

UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER 332 2 DESCRIPTION 1 1The UTC 2SC3356 is designed for such applications as: DC/DC SOT-23-3 SOT-23 converters, supply line switching, battery charger, LCD backlighting, (JEDEC TO-236) (EIAJ SC-59)peripheral drivers, Driver in low supply voltage applications (e.g.lamps an

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors2SC3356 TRANSISTOR (NPN)SOT23 FEATURES Low Noise and High Gain High Power GainMAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASESymbol Parameter Value Unit 2. EMITTERV Collector-Base Voltage 20 V CBO3. COLLECTORV Collector-Emitter Voltage 12 V CEOV Emitter-Bas

2SC3356 TRANSISTOR (NPN) FEATURES SOT-23 / SOT-23-3L Power dissipation PCM: 0.2 W (Tamb=25) Collector current 1. BASE ICM: 0.1 A 2. EMITTER Collector-base voltage 3. COLLECTOR V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM3356MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 12 VdcC

2SC3356 SOT-23-3L Transistor(NPN)SOT-23-3L1. BASE 2. EMITTER 2.923. COLLECTOR 0.351.17Features2.80 1.60 Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain 0.151.90Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 20 V VC

2SC3356 Silicon Epitaxial Planar TransistorA SOT-23 Dim Min MaxFEATURES A 2.70 3.10E Low noise and high gain. B 1.10 1.50K BNF=1.1dB TYP.,Ga=11dB TYP. C 1.0 Typical@VCE=10V,IC=7mA, f=1.0GHz D 0.4 TypicalE 0.35 0.48J High power gain. MAG=13dB TYP. DG 1.80 2.00@VCE=10V,IC=20mA,f=1.0GHz. GH 0.02 0.1J 0.1 TypicalHK 2.20 2.60APPLICATIONSCAll Dime

2SC3356High-Frequency Amplifier Transistor3NPN Silicon 1P b Lead(Pb)-Free2FEATURES1. BASE* Low noise amplifier at VHF, UHF and CATV band. 2. EMITTER3. COLLECTOR* Low Noise and High Gain* High Power GainSOT-23MAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVCBO Collector- Base Voltage 20 VVCEO Collector-Emitter Voltage 12 VVEBO Emi

SMD Type TransistorsSMD TypeNPN Transistors2SC3356SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesLow noise and high gain.NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz1 2High power gain. +0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz1.Base2.Emitter3.collectorAbsolute Maximum Rating

2SC3356NPN Silicon Epitaxial TransistorFeaturesLow noise and high gain.NF = 1.1 dB Typ., Ga =11dBTyp. @VCE =10V, IC =7mA, f =1.0GHzHigh power gain.MAG = 13 dB Typ. @VCE =10V, IC =20mA, f =1.0GHzhFE ClassificationMarking R25PbRank ShFE 120 220Lead-free SOT-23 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO 20 VCollector

2SC3356 TRANSISTOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: High transition frequency Small rbbCc and high gain. Small NF.ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitVCBOCollector-Base Voltage 20 VVCEOCollector-Emitter Voltage 11 VVEBOEmitter-Base Voltage 3 VICCollec

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD2SC3356MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 12 VdcCollector-Base VoltageVCBO 20 VdcEmitter-Base VoltageVEBO Vdc3.0Colle

2SC3356BIPOLAR TRANSISTOR (NPN)FEATURES High power gain Low Noise For Low Noise Amplifier at UHF/VHF/CATV Band Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT- 23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbo

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3356DESCRIPTIONLow Noise and High GainNF = 1.1 dB TYP., G = 11 dB TYP.a@V = 10 V, I = 7 mA, f = 1.0 GHzCE CHigh Power GainMAG = 13 dB TYP.@V = 10 V, I = 20 mA, f = 1.0 GHzCE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low noise amplifier at

2SC3356W(BR3DG3356W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features Low noise and high power gain. / Applications low noise amplifier at VHF, UHF and C

DATA SHEETLESHAN RADIO COMPANY, LTD.L2SC3356LT1GDESCRIPTIONThe L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

DATA SHEETLESHAN RADIO COMPANY, LTD.L2SC3356LT1GDESCRIPTIONThe L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

DATA SHEETLESHAN RADIO COMPANY, LTD.DESCRIPTION L2SC3356WT1GThe L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic. 3S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

DATA SHEETLESHAN RADIO COMPANY, LTD.DESCRIPTION L2SC3356WT1GThe L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic. 3S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

GST2SC3356 High-Frequency Amplifier Transistor NPN Silicon Product Description Features This device is designed as a general purpose Low noise amplifier at VHF, UHF and CATV amplifier and switch. band Low Noise and High Gain High Power Gain Lead(Pb)-FreePackages & Pin Assignments GST2SC3356F(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Informati

2SC3356NPN2SC3356 NPN SOT-23 VHFUHF CATV :S21e2 12dB @ VCE=10

2SC3356-R25Silicon Epitaxial Planar Transistor Silicon Epitaxial Planar Transistor 2SC3356-R25 FEATURES Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS SOT-23 Designed for low noise amplifier at VHF,UHF and CATV band. ORDERING INFORMATION Type No. Marking Package C

2SC3356NPN Transistors3Features2Low noise and high gain.1. GateNF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz2. Source13. DrainHigh power gain.MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz Simplified outline(SOT23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO 20 VCollector to emitter

2SC3356SNPN N RF TRAN SILICON ANSISTOR 3 U equency low sistor Ultra high fre w noise transSilicon epitax process. xial bipolar pH gain, low noHigh power g oise figure, hi c range and ideal current characterisigh dynamic n stics, 2 SOT-23 chip package, maip inly used in VHF, UHF and CATV hi cy wideband amplifier.igh frequenc d low noise a1 SOT-23

NPN N RF TRAN SILICON ANSISTOR 3 U equency low sistor Ultra high fre w noise transSilicon epitax process. xial bipolar pH gain, low noHigh power g oise figure, hi c range and ideal current characterisigh dynamic n stics, SC-59 chip p inly used in VHF, UHF and CATV 2 package, maii cy wideband amplifier.high frequenc d low noise a 1 SCC-59 Fea 1

2SC3356 (NPN) High-Frequency Amplifier Transistor 1TO-92 3FEATURES 2* SOT231Low noise and high gain. NF=1.1dB Typ. f=1.0 GHz Ga=11dB Typ.@Vce=10V,Ic=7mA3* High power gain. 21MAG=13dB Typ.@Vce=10V,Ic=20mAf=1.0 GHz SOT-23-3L321SOT-5231:B 2:E 3:C