2SC3365 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3365
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 12
Encapsulados: TO247
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2SC3365 datasheet
2sc3365.pdf
2SC3365 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2SC3365 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Collector current IC 10 A Collector
2sc3365.pdf
isc Silicon NPN Power Transistor 2SC3365 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
2sa1331 2sc3361.pdf
Ordering number EN3217 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1331/2SC3361 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High breakdown voltage. 2018A Small-sized package permitting the 2SA1331/ [2SA1331/2SC3361] 2SC3361-applied sets to be made small and slim. Switching Time Test Circuit C Collector B Base (Fo
Otros transistores... 2SC3360 , 2SC3361 , 2SC3361S4 , 2SC3361S5 , 2SC3361S6 , 2SC3362 , 2SC3363 , 2SC3364 , BC558 , 2SC3366 , 2SC3367 , 2SC3368 , 2SC3369 , 2SC337 , 2SC3370 , 2SC3371 , 2SC3372 .
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