2SC3365 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC3365Silicon NPN Triple DiffusedApplicationHigh voltage, high speed and high power switchingOutlineTO-3P1. Base2. Collector(Flange)3. Emitter1232SC3365Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 500 VCollector to emitter voltage VCEO 400 VEmitter to base voltage VEBO 10 VCollector current IC 10 ACollector

isc Silicon NPN Power Transistor 2SC3365DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed and high powerswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Ordering number:EN3217PNP/NPN Epitaxial Planar Silicon Transistors2SA1331/2SC3361High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High breakdown voltage.2018A Small-sized package permitting the 2SA1331/[2SA1331/2SC3361]2SC3361-applied sets to be made small and slim.Switching Time Test CircuitC : CollectorB : Base(Fo

SMD Type TransistorsNPN Transistors2SC3361SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Fast switching speed.1 2 High breakdown voltage.+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1331+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60

SMD Type TransistorsNPN Transistors2SC3360SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High voltage VCEO=200V1 2 High DC Current Gain hFE=90 to 450+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1 Complementary to 2SA13301.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage