2SC3381 Todos los transistores

 ..1. Size:211K  toshiba
 2sc3381.pdf

 ..2. Size:150K  no
 3sk73 3sk77 2sk240 2sj75 2sk146 2sj73 2sk389 2sj109 2sk266 2sk455 2sk456 2sc3381 2sa1349.pdf

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 8.1. Size:236K  sanyo
 2sa1391 2sc3382.pdf

Ordering number EN1942A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1391/2SC3382 Low Noise AF Amp Applications Features Package Dimensions Adoption of FBET process. unit mm AF amp. 2003A Low-noise use. [2SA1391/2SC3382] Noise Test Circuit JEDEC TO-92 B Base ( ) 2SA1391 EIAJ SC-43 C Collector SANYO NP E Emitter Specifications Absolute Maximum Rating

 8.2. Size:173K  sanyo
 2sa1392 2sc3383.pdf

Ordering number EN1943A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Features Package Dimensions Adoption of FBET process. unit mm AF amp. 2003A [2SA1392/2SC3383] JEDEC TO-92 B Base ( ) 2SA1392 EIAJ SC-43 C Collector SANYO NF E Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratin

 8.3. Size:76K  renesas
 rej03g0713 2sc3380ds-1.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:29K  hitachi
 2sc3380.pdf

2SC3380 Silicon NPN Triple Diffused Application High frequency high voltage amplifier High voltage switch Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC3380 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 5V Collec

 8.5. Size:856K  kexin
 2sc3380.pdf

SMD Type Transistors NPN Transistors 2SC3380 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=300V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag

 8.6. Size:188K  inchange semiconductor
 2sc3388.pdf

isc Silicon NPN Power Transistor 2SC3388 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col

 8.7. Size:197K  inchange semiconductor
 2sc3387.pdf

isc Silicon NPN Power Transistor 2SC3387 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col