2SC3419O Todos los transistores

 7.1. Size:176K  toshiba
 2sc3419.pdf

 7.2. Size:200K  inchange semiconductor
 2sc3419.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3419 DESCRIPTION Low Collector Saturation Voltage High power dissipation Complementary to 2SA1356 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 8.1. Size:150K  sanyo
 2sa1353 2sc3417.pdf

Ordering number EN1390D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1353/2SC3417 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Color TV chroma output, high-voltage driver appli- 2009B cations. [2SA1353/2SC3417] Features High breakdown voltage VCEO 300V. Excellent high fr

 8.2. Size:149K  sanyo
 2sa1352 2sc3416.pdf

Ordering number EN1411C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1352/2SC3416 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Color TV chroma output, high-voltage driver unit mm applicatons. 2009B [2SA1352/2SC3416] Features High breakdown voltage VCEO 200V. Small reverse transfer capacitance and excellent high freq

 8.3. Size:163K  rohm
 2sc4061k 2sc3415s 2sc4015.pdf

Chroma amplifier transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 Features Dimensions (Unit mm) 1) High breakdown voltage. (BVCEO=300V) 2SC4061K 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 2.8 (1) Emitter Absolute maximum ratings (Ta=25 C) (2) Base (3) Collector Parameter Symbol Limits Unit 0.3Min. ROHM

 8.4. Size:68K  rohm
 2sc3415s.pdf

2SC4061K / 2SC3415S / 2SC4015 Transistors Chroma amplifier transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 External dimensions (Units mm) Features 1) High breakdown voltage. (BVCEO=300V) 2SC4061K 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 2.8 (1) Emitter (2) Base (3) Collector 0.3Min. Absolute maximum ratings (Ta=25

 8.5. Size:24K  hitachi
 2sc3413.pdf

2SC3413 Silicon NPN Epitaxial Application Low frequency low noise amplifier HF amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3413 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissip

 8.6. Size:78K  secos
 2sc3415.pdf

2SC3415 0.1A , 300V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Breakdown Voltage G H Low Collector Output Capacitance Ideal for Chroma Circuit Emitter Collector J Base A D CLASSIFICATION OF hFE Millimeter B REF. Product-Rank 2SC

 8.7. Size:261K  foshan
 2sc3417 3da3417.pdf

2SC3417(3DA3417) NPN /SILICON NPN TRANSISTOR , /Purpose High-definition CRT display, color TV chroma output and high breakdown voltage driver. , /Features High breakdown voltage, excellent high frequency Characteristic. /Absolute maxi

 8.8. Size:208K  inchange semiconductor
 2sc3412.pdf

isc Silicon NPN Power Transistor 2SC3412 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 500V (Min) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vol

 8.9. Size:198K  inchange semiconductor
 2sc3416.pdf

isc Silicon NPN Power Transistor 2SC3416 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V (Min) (BR)CEO Complement to Type 2SA1352 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma output, high-voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V