2SC3422O Todos los transistores

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2SC3422O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC3422O

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100 MHz

Capacitancia de salida (Cc): 35 pF

Ganancia de corriente contínua (hfe): 80

Empaquetado / Estuche: ISO126

Búsqueda de reemplazo de transistor bipolar 2SC3422O

 

2SC3422O Datasheet (PDF)

3.1. 2sc3422 3da3422.pdf Size:149K _update

2SC3422O
2SC3422O

2SC3422(3DA3422) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频功率放大和低速开关。 Purpose: Audio frequency power amplifier, low speed switching. 特点:适合于汽车音响的 5W 输出级,h 线性好,与 2SA1359(3CA1359)互补。 FE Features: Suitable for output stage of 5 watts car radio and car stereo, good linearity of h , FE compleme

3.2. 2sc3422.pdf Size:175K _toshiba

2SC3422O
2SC3422O

4.1. 2sc3423-126.pdf Size:133K _update

2SC3422O
2SC3422O

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION ·With TO-126 package ·Complement to type 2SA1360 ·High transition frequency APPLICATIONS ·Audio frequency amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITION

4.2. 2sc3421 3da3421.pdf Size:292K _update

2SC3422O
2SC3422O

2SC3421(3DA3421) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频功率放大。 Purpose: Audio frequency power amplifier applications. 特征:高 V 用于 60-80W 音频驱动放大,与 2SA1358(3CA1358)互补。 CEO , Features: High V ,suitable for driver of 60 to 80 watts audio amplifier, complementary CEO to 2SA1358(3CA1358). 极限参数/Absolute

4.3. 2sc3420 3da3420.pdf Size:168K _update

2SC3422O
2SC3422O

2SC3420(3DA3420) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于存储器闪光驱动,中功率放大电路。 Purpose: Storobo flash applications, medium power amplifier applications. 特点:高直流电增益,饱和压降低, 高集电极耗散功率。 Features: High DC current gain, low saturation voltage,high collector power dissipation. 极限参数/Absolute ma

4.4. 2sc3429.pdf Size:318K _toshiba

2SC3422O
2SC3422O

2SC3429 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3429 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure NF = 1.5dB, |S |2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, |S |2 = 10.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter voltage VCEO 12 V Em

4.5. 2sc3425.pdf Size:238K _toshiba

2SC3422O
2SC3422O

4.6. 2sc3420.pdf Size:180K _toshiba

2SC3422O
2SC3422O

4.7. 2sc3421.pdf Size:176K _toshiba

2SC3422O
2SC3422O

4.8. 2sc3423.pdf Size:133K _toshiba

2SC3422O
2SC3422O

2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SA1360 Small collector output capacitance: Cob = 1.8 pF (typ.) High transition frequency: fT = 200 MHz (typ.) Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage

4.9. 2sc3420.pdf Size:195K _jmnic

2SC3422O
2SC3422O

JMnic Product Specification Silicon NPN Power Transistors 2SC3420 DESCRIPTION · ·With TO-126 package ·High DC current gain ·Low saturation voltage ·High collector power dissipation APPLICATIONS ·Storobo flash applications ·Medium power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum rating

4.10. 2sc3423.pdf Size:197K _jmnic

2SC3422O
2SC3422O

JMnic Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION · ·With TO-126 package ·Complement to type 2SA1360 ·High transition frequency APPLICATIONS ·Audio frequency amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

4.11. 2sc3420.pdf Size:161K _inchange_semiconductor

2SC3422O
2SC3422O

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3420 DESCRIPTION Ў¤ With TO-126 package Ў¤ High DC current gain Ў¤ Low saturation voltage Ў¤ High collector power dissipation APPLICATIONS Ў¤ Storobo flash applications Ў¤ Medium power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤

4.12. 2sc3421.pdf Size:263K _inchange_semiconductor

2SC3422O
2SC3422O

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3421 DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min) ·Complement to Type 2SA1358 APPLICATIONS ·Designed for audio frequency power amplifier applications. ·Suitable for driver of 60 to 80 Watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA

4.13. 2sc3423.pdf Size:163K _inchange_semiconductor

2SC3422O
2SC3422O

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA1360 Ў¤ High transition frequency APPLICATIONS Ў¤ Audio frequency amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO V

4.14. 2sc3429.pdf Size:2723K _kexin

2SC3422O
2SC3422O

SMD Type Transistors NPN Transistors 2SC3429 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=70mA 1 2 ● Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 17 Collect

Otros transistores... 2SC3420 , 2SC3420B , 2SC3420G , 2SC3420Y , 2SC3421 , 2SC3421O , 2SC3421Y , 2SC3422 , 431 , 2SC3422Y , 2SC3423 , 2SC3423O , 2SC3423Y , 2SC3424 , 2SC3425 , 2SC3426 , 2SC3427 .

 


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