2SC3424 Todos los transistores

isc Silicon NPN Power Transistor 2SC3424 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 250V (Min) (BR)CEO Complement to Type 2SA1361 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 250 V ... See More ⇒

2SC3429 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3429 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.5dB, S 2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, S 2 = 10.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter voltage VCE... See More ⇒

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2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423 Audio Frequency Amplifier Applications Unit mm Complementary to 2SA1360 Small collector output capacitance Cob = 1.8 pF (typ.) High transition frequency fT = 200 MHz (typ.) Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitt... See More ⇒

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JMnic Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION With TO-126 package Complement to type 2SA1360 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT ... See More ⇒

JMnic Product Specification Silicon NPN Power Transistors 2SC3420 DESCRIPTION With TO-126 package High DC current gain Low saturation voltage High collector power dissipation APPLICATIONS Storobo flash applications Medium power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum rat... See More ⇒

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SMD Type Transistors NPN Transistors 2SC3429 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=70mA 1 2 Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 17 Collect... See More ⇒

2SC3421(3DA3421) NPN /SILICON NPN TRANSISTOR Purpose Audio frequency power amplifier applications. V 60-80W 2SA1358 3CA1358 CEO Features High V ,suitable for driver of 60 to 80 watts audio amplifier, complementary CEO to 2SA1358(3CA1358). /Absolute ... See More ⇒

2SC3422(3DA3422) NPN /SILICON NPN TRANSISTOR Purpose Audio frequency power amplifier, low speed switching. 5W h 2SA1359(3CA1359) FE Features Suitable for output stage of 5 watts car radio and car stereo, good linearity of h , FE compleme... See More ⇒

2SC3420(3DA3420) NPN /SILICON NPN TRANSISTOR , Purpose Storobo flash applications, medium power amplifier applications. , , Features High DC current gain, low saturation voltage high collector power dissipation. /Absolute ma... See More ⇒

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION With TO-126 package Complement to type 2SA1360 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITION... See More ⇒

isc Silicon NPN Power Transistor 2SC3423 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Complement to Type 2SA1360 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3420 DESCRIPTION High Collector Current-I = 5.0A C DC Current Gain- h = 70(Min)@I = 4A FE C Low Saturation Voltage V = 1.0V(Max)@I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Strobe flash applications. Medium power amplifier applications. ... See More ⇒

isc Silicon NPN Power Transistor 2SC3422 DESCRIPTION Collector-Emitter Breakdown Voltage V = 40V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1359 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier Low speed switching Suitable for output stage of 5 watts car radio and car stere... See More ⇒

isc Silicon NPN Power Transistor 2SC3421 DESCRIPTION High Collector-Emitter Breakdown Voltage V = 120V(Min) (BR)CEO Complement to Type 2SA1358 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. Suitable for driver of 60 to 80 Watts audio amplifier. ABSOLUTE MAXIMUM RATI... See More ⇒