2SC3428 Todos los transistores

 8.1. Size:318K  toshiba
 2sc3429.pdf

2SC3429 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3429 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.5dB, S 2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, S 2 = 10.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter voltage VCE

 8.2. Size:238K  toshiba
 2sc3425.pdf

 8.3. Size:133K  toshiba
 2sc3423.pdf

2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423 Audio Frequency Amplifier Applications Unit mm Complementary to 2SA1360 Small collector output capacitance Cob = 1.8 pF (typ.) High transition frequency fT = 200 MHz (typ.) Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitt

 8.4. Size:180K  toshiba
 2sc3420.pdf

 8.5. Size:175K  toshiba
 2sc3422.pdf

 8.6. Size:176K  toshiba
 2sc3421.pdf

 8.7. Size:197K  jmnic
 2sc3423.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION With TO-126 package Complement to type 2SA1360 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 8.8. Size:195K  jmnic
 2sc3420.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3420 DESCRIPTION With TO-126 package High DC current gain Low saturation voltage High collector power dissipation APPLICATIONS Storobo flash applications Medium power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum rat

 8.9. Size:736K  blue-rocket-elect
 2sc3420.pdf

 8.10. Size:2723K  kexin
 2sc3429.pdf

SMD Type Transistors NPN Transistors 2SC3429 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=70mA 1 2 Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 17 Collect

 8.11. Size:292K  foshan
 2sc3421 3da3421.pdf

2SC3421(3DA3421) NPN /SILICON NPN TRANSISTOR Purpose Audio frequency power amplifier applications. V 60-80W 2SA1358 3CA1358 CEO Features High V ,suitable for driver of 60 to 80 watts audio amplifier, complementary CEO to 2SA1358(3CA1358). /Absolute

 8.12. Size:149K  foshan
 2sc3422 3da3422.pdf

2SC3422(3DA3422) NPN /SILICON NPN TRANSISTOR Purpose Audio frequency power amplifier, low speed switching. 5W h 2SA1359(3CA1359) FE Features Suitable for output stage of 5 watts car radio and car stereo, good linearity of h , FE compleme

 8.13. Size:168K  foshan
 2sc3420 3da3420.pdf

2SC3420(3DA3420) NPN /SILICON NPN TRANSISTOR , Purpose Storobo flash applications, medium power amplifier applications. , , Features High DC current gain, low saturation voltage high collector power dissipation. /Absolute ma

 8.14. Size:191K  inchange semiconductor
 2sc3424.pdf

isc Silicon NPN Power Transistor 2SC3424 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 250V (Min) (BR)CEO Complement to Type 2SA1361 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 250 V

 8.15. Size:133K  inchange semiconductor
 2sc3423-126.pdf

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION With TO-126 package Complement to type 2SA1360 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITION

 8.16. Size:196K  inchange semiconductor
 2sc3423.pdf

isc Silicon NPN Power Transistor 2SC3423 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Complement to Type 2SA1360 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag

 8.17. Size:211K  inchange semiconductor
 2sc3420.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3420 DESCRIPTION High Collector Current-I = 5.0A C DC Current Gain- h = 70(Min)@I = 4A FE C Low Saturation Voltage V = 1.0V(Max)@I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Strobe flash applications. Medium power amplifier applications.

 8.18. Size:197K  inchange semiconductor
 2sc3422.pdf

isc Silicon NPN Power Transistor 2SC3422 DESCRIPTION Collector-Emitter Breakdown Voltage V = 40V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1359 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier Low speed switching Suitable for output stage of 5 watts car radio and car stere

 8.19. Size:217K  inchange semiconductor
 2sc3421.pdf

isc Silicon NPN Power Transistor 2SC3421 DESCRIPTION High Collector-Emitter Breakdown Voltage V = 120V(Min) (BR)CEO Complement to Type 2SA1358 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. Suitable for driver of 60 to 80 Watts audio amplifier. ABSOLUTE MAXIMUM RATI