2SC3433 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3433
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60 W
Tensión colector-base (Vcb): 500 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 55
Paquete / Cubierta: X104
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2SC3433 Datasheet (PDF)
2sc3437.pdf
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2SC3437 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3437 Ultra High Speed Switching Applications Unit: mm Computer, Counter Applications High transition frequency: fT = 400 MHz (typ.) Low saturation voltage: V = 0.3 V (max) CE (sat) High speed switching time: t = 15 ns (typ.) stgMaximum Ratings (Ta == 25C) ==Characteristics Symbol R
2sc3438.pdf
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ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sc3439.pdf
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ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sc3437.pdf
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2 3437SC TRANSISTOR (NPN)SOT23 FEATURES High Transition Frequency Low Saturation Voltage 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 40 V CBOVCEO Collector-Emitter Voltage 15 V V Emitter-Base Voltage 5 V EBOI Collector Current 200 mA CP Collector Power Diss
2sc3437.pdf
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SMD Type TransistorsNPN Transistors2SC3437SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=200mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collec
2sc3438.pdf
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SMD Type TransistorsNPN Transistors2SC34381.70 0.1 Features High Voltage VCEO = 100V High Collector Current (ICM = 800mA) High Collector Dissipation PC = 500mW Small Package For Mounting0.42 0.10.46 0.1 Complementary to 2SA13681.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Vo
2sc3439.pdf
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SMD Type TransistorsNPN Transistors2SC34391.70 0.1 Features High hFE : hFE=400 to 1800 High collector current Low collector to emitter saturation voltage0.42 0.10.46 0.1 High collector dissipation Pc=500mW Small package for mounting1.Base Complementary to 2SA13692.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symb
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .