2SC3437 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC3437 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3437 Ultra High Speed Switching Applications Unit: mm Computer, Counter Applications High transition frequency: fT = 400 MHz (typ.) Low saturation voltage: V = 0.3 V (max) CE (sat) High speed switching time: t = 15 ns (typ.) stgMaximum Ratings (Ta == 25C) ==Characteristics Symbol R

2 3437SC TRANSISTOR (NPN)SOT23 FEATURES High Transition Frequency Low Saturation Voltage 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 40 V CBOVCEO Collector-Emitter Voltage 15 V V Emitter-Base Voltage 5 V EBOI Collector Current 200 mA CP Collector Power Diss

SMD Type TransistorsNPN Transistors2SC3437SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=200mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collec

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

SMD Type TransistorsNPN Transistors2SC34381.70 0.1 Features High Voltage VCEO = 100V High Collector Current (ICM = 800mA) High Collector Dissipation PC = 500mW Small Package For Mounting0.42 0.10.46 0.1 Complementary to 2SA13681.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Vo

SMD Type TransistorsNPN Transistors2SC34391.70 0.1 Features High hFE : hFE=400 to 1800 High collector current Low collector to emitter saturation voltage0.42 0.10.46 0.1 High collector dissipation Pc=500mW Small package for mounting1.Base Complementary to 2SA13692.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symb