2SC3449 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number EN1572C NPN Triple Diffused Planar Silicon Transistor 2SC3449 500V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3449] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolu

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3449 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage and high reliability Fast switching speed Wide ASO NPN triple diffused planar silicon transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator ap

Ordering number EN1544B NPN Triple Diffused Planar Silicon Transistor 2SC3446 500V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2010C Wide ASO. [2SC3446] Adoption of MBIT process. 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specif

Ordering number EN1545B NPN Triple Diffused Planar Silicon Transistor 2SC3447 500V/5A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2010C Wide ASO. [2SC3447] Adoption of MBIT process. 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specif

Ordering number EN1546B NPN Triple Diffused Planar Silicon Transistor 2SC3448 500V/4A Switching Regulator Applications Applications Package Dimensions Switching regulator. unit mm 2022A Features [2SC3448] High breakdown voltage and high reliability. Fast switching speed (tf 0.1 s typ). Wide ASO. Adoption of MBIT process. 1 Base 2 Collector 3 Emitter

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

http //www.idc-com.co.jp 854-0065 6-41

JMnic Product Specification Silicon NPN Power Transistors 2SC3447 DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 500V/5A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(

SMD Type Transistors NPN Transistors 2SC3440 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Low collector to emitter saturation voltage. Excellent linearity nof DC forward current gain. 1 2 Super mini package for easy mounting. +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 High collector current. Complementary to 2SA1365 1.Base 2.Emitter

SMD Type Transistors NPN Transistors 2SC3444 Features 1.70 0.1 High Voltage High collector current Low collector to emitter saturation voltage High collector dissipation Pc=500mW 0.42 0.1 0.46 0.1 Small package for mounting Complementary to 2SA1364 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

SMD Type Transistors NPN Transistors 2SC3443 1.70 0.1 Features High hFE hFE=150 to 800 High collector current Low collector to emitter saturation voltage 0.42 0.1 0.46 0.1 High collector dissipation Pc=500mW Small package for mounting 1.Base Complementary to 2SA1363 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol

SMD Type Transistors NPN Transistors 2SC3441 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=400mA 1 2 Collector Emitter Voltage VCEO=50V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 Complementary to 2SA1366 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

isc Silicon NPN Power Transistor 2SC3446 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

isc Silicon NPN Power Transistor 2SC3447 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

isc Silicon NPN Power Transistor 2SC3448 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO