2SC3449L Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3449L
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 800 V
Tensión colector-emisor (Vce): 500 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 18 MHz
Capacitancia de salida (Cc): 80 pF
Ganancia de corriente contínua (hFE): 15
Encapsulados: TO247
Búsqueda de reemplazo de 2SC3449L
- Selecciónⓘ de transistores por parámetros
2SC3449L datasheet
7.1. Size:113K sanyo
2sc3449.pdf 
Ordering number EN1572C NPN Triple Diffused Planar Silicon Transistor 2SC3449 500V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3449] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolu
7.2. Size:192K inchange semiconductor
2sc3449.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3449 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage and high reliability Fast switching speed Wide ASO NPN triple diffused planar silicon transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator ap
8.1. Size:98K sanyo
2sc3446.pdf
Ordering number EN1544B NPN Triple Diffused Planar Silicon Transistor 2SC3446 500V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2010C Wide ASO. [2SC3446] Adoption of MBIT process. 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specif
8.2. Size:97K sanyo
2sc3447.pdf
Ordering number EN1545B NPN Triple Diffused Planar Silicon Transistor 2SC3447 500V/5A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2010C Wide ASO. [2SC3447] Adoption of MBIT process. 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specif
8.3. Size:99K sanyo
2sc3448.pdf
Ordering number EN1546B NPN Triple Diffused Planar Silicon Transistor 2SC3448 500V/4A Switching Regulator Applications Applications Package Dimensions Switching regulator. unit mm 2022A Features [2SC3448] High breakdown voltage and high reliability. Fast switching speed (tf 0.1 s typ). Wide ASO. Adoption of MBIT process. 1 Base 2 Collector 3 Emitter
8.4. Size:124K isahaya
2sc3440.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
8.5. Size:145K isahaya
2sc3444.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
8.6. Size:141K isahaya
2sc3443.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
8.7. Size:59K isahaya
2sc3441.pdf
http //www.idc-com.co.jp 854-0065 6-41
8.8. Size:212K jmnic
2sc3447.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3447 DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 500V/5A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(
8.9. Size:919K kexin
2sc3440.pdf
SMD Type Transistors NPN Transistors 2SC3440 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Low collector to emitter saturation voltage. Excellent linearity nof DC forward current gain. 1 2 Super mini package for easy mounting. +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 High collector current. Complementary to 2SA1365 1.Base 2.Emitter
8.10. Size:883K kexin
2sc3444.pdf
SMD Type Transistors NPN Transistors 2SC3444 Features 1.70 0.1 High Voltage High collector current Low collector to emitter saturation voltage High collector dissipation Pc=500mW 0.42 0.1 0.46 0.1 Small package for mounting Complementary to 2SA1364 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit
8.11. Size:890K kexin
2sc3443.pdf
SMD Type Transistors NPN Transistors 2SC3443 1.70 0.1 Features High hFE hFE=150 to 800 High collector current Low collector to emitter saturation voltage 0.42 0.1 0.46 0.1 High collector dissipation Pc=500mW Small package for mounting 1.Base Complementary to 2SA1363 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol
8.12. Size:897K kexin
2sc3441.pdf
SMD Type Transistors NPN Transistors 2SC3441 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=400mA 1 2 Collector Emitter Voltage VCEO=50V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 Complementary to 2SA1366 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector
8.13. Size:216K inchange semiconductor
2sc3446.pdf
isc Silicon NPN Power Transistor 2SC3446 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
8.14. Size:216K inchange semiconductor
2sc3447.pdf
isc Silicon NPN Power Transistor 2SC3447 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
8.15. Size:220K inchange semiconductor
2sc3448.pdf
isc Silicon NPN Power Transistor 2SC3448 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
Otros transistores... 2SC3447L, 2SC3447M, 2SC3447N, 2SC3448, 2SC3448L, 2SC3448M, 2SC3448N, 2SC3449, 431, 2SC3449M, 2SC3449N, 2SC345, 2SC3450, 2SC3450L, 2SC3450M, 2SC3450N, 2SC3451
