2SC3455L Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3455L
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 160 W
Tensión colector-base (Vcb): 800 V
Tensión colector-emisor (Vce): 500 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 25 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 18 MHz
Capacitancia de salida (Cc): 320 pF
Ganancia de corriente contínua (hFE): 15
Encapsulados: TO3
Búsqueda de reemplazo de 2SC3455L
- Selecciónⓘ de transistores por parámetros
2SC3455L datasheet
8.1. Size:118K sanyo
2sc3451.pdf 
Ordering number EN1577B NPN Triple Diffused Planar Silicon Transistor 2SC3451 500V/15A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3451] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absol
8.2. Size:109K sanyo
2sc3456.pdf
Ordering number EN1579D NPN Triple Diffused Planar Silicon Transistor 2SC3456 800V/1.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2010C Wide ASO. [2SC3456] Adoption of MBIT process. 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Spec
8.3. Size:112K sanyo
2sc3450.pdf
Ordering number EN1576C NPN Triple Diffused Planar Silicon Transistor 2SC3450 500V/10A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3450] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absol
8.4. Size:113K sanyo
2sc3458.pdf
Ordering number EN1589C NPN Triple Diffused Planar Type Silicon Transistor 2SC3458 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3458] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications A
8.5. Size:109K sanyo
2sc3459.pdf
Ordering number EN1591C NPN Triple Diffused Planar Silicon Transistor 2SC3459 800V/4.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3459] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Abso
8.6. Size:115K sanyo
2sc3457.pdf
Ordering number EN1580C NPN Triple Diffused Planar Type Silicon Transistor 2SC3457 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2010C Wide ASO. [2SC3457] Adoption of MBIT process. 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter S
8.7. Size:227K jmnic
2sc3451.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3451 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide area of safe operation APPLICATIONS 500V/15A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and sym
8.8. Size:221K jmnic
2sc3456.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3456 DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide ASO area of safe operation APPLICATIONS 800V/1.5A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum
8.9. Size:225K jmnic
2sc3458.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3458 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide ASO(Safe Operating Area) APPLICATIONS 800V/3A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and sy
8.10. Size:224K jmnic
2sc3457.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3457 DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 800V/3A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(
8.11. Size:202K inchange semiconductor
2sc3451.pdf
isc Silicon NPN Power Transistor 2SC3451 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
8.12. Size:198K inchange semiconductor
2sc3456.pdf
isc Silicon NPN Power Transistor 2SC3456 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas
8.13. Size:202K inchange semiconductor
2sc3450.pdf
isc Silicon NPN Power Transistor 2SC3450 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
8.14. Size:200K inchange semiconductor
2sc3458.pdf
isc Silicon NPN Power Transistor 2SC3458 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas
8.15. Size:199K inchange semiconductor
2sc3459.pdf
isc Silicon NPN Power Transistor 2SC3459 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas
8.16. Size:215K inchange semiconductor
2sc3457.pdf
isc Silicon NPN Power Transistor 2SC3457 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas
Otros transistores... 2SC3451, 2SC3451L, 2SC3451M, 2SC3451N, 2SC3452, 2SC3453, 2SC3454, 2SC3455, BD139, 2SC3455M, 2SC3455N, 2SC3456, 2SC3456K, 2SC3456L, 2SC3456M, 2SC3457, 2SC3457K
