2SC3458 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SC3458
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 1100 V
   Tensión colector-emisor (Vce): 800 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 15 MHz
   Capacitancia de salida (Cc): 60 pF
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO247

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2SC3458 Datasheet (PDF)

..1. Size:113K sanyo
2sc3458.pdf

Ordering number:EN1589CNPN Triple Diffused Planar Type Silicon Transistor2SC3458800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3458] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsA

..2. Size:225K jmnic
2sc3458.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3458 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide ASO(Safe Operating Area) APPLICATIONS 800V/3A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and sy

..3. Size:200K inchange semiconductor
2sc3458.pdf

isc Silicon NPN Power Transistor 2SC3458DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

8.1. Size:118K sanyo
2sc3451.pdf

Ordering number:EN1577BNPN Triple Diffused Planar Silicon Transistor2SC3451500V/15A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3451] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsol

8.2. Size:109K sanyo
2sc3456.pdf

Ordering number:EN1579DNPN Triple Diffused Planar Silicon Transistor2SC3456800V/1.5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2010C Wide ASO.[2SC3456] Adoption of MBIT process.1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpec

8.3. Size:112K sanyo
2sc3450.pdf

Ordering number:EN1576CNPN Triple Diffused Planar Silicon Transistor2SC3450500V/10A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3450] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsol

8.4. Size:52K sanyo
2sc3455.pdf

8.5. Size:109K sanyo
2sc3459.pdf

Ordering number:EN1591CNPN Triple Diffused Planar Silicon Transistor2SC3459800V/4.5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3459] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbso

8.6. Size:115K sanyo
2sc3457.pdf

Ordering number:EN1580CNPN Triple Diffused Planar Type Silicon Transistor2SC3457800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2010C Wide ASO.[2SC3457] Adoption of MBIT process.1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterS

8.7. Size:227K jmnic
2sc3451.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3451 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide area of safe operation APPLICATIONS 500V/15A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and sym

8.8. Size:221K jmnic
2sc3456.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3456 DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide ASOarea of safe operation APPLICATIONS 800V/1.5A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum

8.9. Size:224K jmnic
2sc3457.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3457 DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 800V/3A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(

8.10. Size:202K inchange semiconductor
2sc3451.pdf

isc Silicon NPN Power Transistor 2SC3451DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

8.11. Size:198K inchange semiconductor
2sc3456.pdf

isc Silicon NPN Power Transistor 2SC3456DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

8.12. Size:202K inchange semiconductor
2sc3450.pdf

isc Silicon NPN Power Transistor 2SC3450DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

8.13. Size:199K inchange semiconductor
2sc3459.pdf

isc Silicon NPN Power Transistor 2SC3459DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

8.14. Size:215K inchange semiconductor
2sc3457.pdf

isc Silicon NPN Power Transistor 2SC3457DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Liste

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