2N2000 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N2000
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 20 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 100 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2 MHz
Capacitancia de salida (Cc): 35 pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar 2N2000
2N2000 Datasheet (PDF)
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GOFORD XM2N200. D Description The XM2N200.uses advanced trench technology and G design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features S Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 190V 356.6m 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage an
sfp135n200c3 sfb132n200c3.pdf
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sfw132n200i3.pdf
SFW132N200I3 N-MOSFET 200V, 10.4m , 95A Features Product Summary N-channel, normal level V 200V DS Enhanced avalanche ruggedness R 10.4m DS(on) Maximum 175 C junction temperature I 95A D 100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/DC Converter SFW132N200I3 Package
Otros transistores... 2N1993 , 2N1994 , 2N1995 , 2N1996 , 2N1997 , 2N1998 , 2N1999 , 2N200 , D965 , 2N2001 , 2N2002 , 2N2003 , 2N2004 , 2N2005 , 2N2006 , 2N2007 , 2N2008 .
History: 2N2034 | RN2969FE | 2SD1979 | 2SC3017 | MSD42T1G | NB021FT | DSA4G01
History: 2N2034 | RN2969FE | 2SD1979 | 2SC3017 | MSD42T1G | NB021FT | DSA4G01
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