2N2000 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N2000
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 20 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 2 MHz
   Capacitancia de salida (Cc): 35 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO5

Búsqueda de reemplazo de transistor bipolar 2N2000

2N2000 Datasheet (PDF)

9.1. Size:2138K goford
xm2n200.pdf

GOFORDXM2N200.DDescription The XM2N200.uses advanced trench technology and Gdesign to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features SSchematic diagram VDSS RDS(ON) ID @10V (typ) 190V 356.6m 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage an

9.2. Size:732K cn scilicon
sfp135n200c3 sfb132n200c3.pdf

SFP135N200C3,SFB132N200C3ENGN-MOSFET 200V, 11.3m, 95AFeatures Product Summary N-channel, normal levelVDS 200V Enhanced avalanche ruggednessRDS(on) 11.3m Maximum 175C junction temperatureID 95A100% DVDS TestedApplications100% Avalanche Tested DC/DC and AC/DC converters Brushed and BLDC Motor drive systems Battery powered systemsSFP135N2

9.3. Size:1074K cn scilicon
sfw132n200i3.pdf

SFW132N200I3 N-MOSFET 200V, 10.4m, 95A Features Product Summary N-channel, normal levelV 200V DS Enhanced avalanche ruggednessR 10.4m DS(on) Maximum 175C junction temperatureI 95A D100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/DC ConverterSFW132N200I3Package

Otros transistores... 2N1993 , 2N1994 , 2N1995 , 2N1996 , 2N1997 , 2N1998 , 2N1999 , 2N200 , KTB688 , 2N2001 , 2N2002 , 2N2003 , 2N2004 , 2N2005 , 2N2006 , 2N2007 , 2N2008 .

Liste

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