2SC3468F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number EN1413C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1371/2SC3468 High-Definition CRT Display, Video Output Applications Use Package Dimensions Color TV chroma output and high breakdown voltage unit mm driver. 2006A [2SA1371/2SC3468] Features High breakdown votage VCEO 300V. Small reverse transfer capacitance and excellent high frequency charact

UTC 2SC3468 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FOR VIDEO OUTPUT OF HIGH-DEFINITION CRT DISPLAYS FEATURES 1 * High breakdown voltage VCBO, VCEO 300V * Small reverse transfer capacitance and excellent high frequency characteristicF SOT-89 1 BASE 2 COLLECTOR 3 EMITTER *Pb-free plating product number 2SC3468L ABSOLUTE MAXIMUM RATINGS (Ta = 25 )

Ordering number EN2487A NPN Triple Diffused Planar Type Silicon Transistor 2SC3466 Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2022A Wide ASO. [2SC3466] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Co

Ordering number EN1596C NPN Triple Diffused Planar Type Silicon Transistor 2SC3461 800V/8A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3461] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications A

Ordering number EN1412C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1370/2SC3467 High-Definition CRT Display, Video Output Applications Use Package Dimensions Color TV chroma output and high breakdown voltage unit mm driver. 2006A [2SA1370/2SC3467] Features High breakdown voltage VCEO 200V. Small reverse transfer capacitance and excellent high frequency charac

Ordering number EN1594B NPN Triple Diffused Planar Silicon Transistor 2SC3460 800V/6A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3460] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolu

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3465 DESCRIPTION With TO-3 package High voltage Fast switching speed APPLICATIONS For switching regulator applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE U

JMnic Product Specification Silicon NPN Power Transistors 2SC3466 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide area of safe operation APPLICATIONS Switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 E

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3461 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide ASO(Safe Operating Area) APPLICATIONS 800V/8A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN)

JMnic Product Specification Silicon NPN Power Transistors 2SC3460 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide area of safe operation APPLICATIONS 800V/6A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symb

isc Silicon NPN Power Transistor 2SC3465 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas

isc Silicon NPN Power Transistor 2SC3466 DESCRIPTION High Breakdown Voltage- V = 1200V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas

isc Silicon NPN Power Transistor 2SC3462 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas

isc Silicon NPN Power Transistor 2SC3461 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

isc Silicon NPN Power Transistor 2SC3460 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas