2N2003 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N2003  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 5 V

Tensión emisor-base (Veb): 30 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.5 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: TO5

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2N2003 datasheet

 9.1. Size:2138K  goford
 xm2n200.pdf pdf_icon

2N2003

GOFORD XM2N200. D Description The XM2N200.uses advanced trench technology and G design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features S Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 190V 356.6m 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage an

 9.2. Size:732K  cn scilicon
 sfp135n200c3 sfb132n200c3.pdf pdf_icon

2N2003

SFP135N200C3,SFB132N200C3 ENG N-MOSFET 200V, 11.3m , 95A Features Product Summary N-channel, normal level VDS 200V Enhanced avalanche ruggedness RDS(on) 11.3m Maximum 175 C junction temperature ID 95A 100% DVDS Tested Applications 100% Avalanche Tested DC/DC and AC/DC converters Brushed and BLDC Motor drive systems Battery powered systems SFP135N2

 9.3. Size:1074K  cn scilicon
 sfw132n200i3.pdf pdf_icon

2N2003

SFW132N200I3 N-MOSFET 200V, 10.4m , 95A Features Product Summary N-channel, normal level V 200V DS Enhanced avalanche ruggedness R 10.4m DS(on) Maximum 175 C junction temperature I 95A D 100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/DC Converter SFW132N200I3 Package

Otros transistores... 2N1996, 2N1997, 2N1998, 2N1999, 2N200, 2N2000, 2N2001, 2N2002, BC549, 2N2004, 2N2005, 2N2006, 2N2007, 2N2008, 2N201, 2N2015, 2N2016