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2SC3488G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC3488G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar 2SC3488G

 

2SC3488G Datasheet (PDF)

 8.1. Size:40K  sanyo
2sc3482.pdf

2SC3488G

 8.2. Size:131K  sanyo
2sc3481.pdf

2SC3488G
2SC3488G

 8.3. Size:41K  sanyo
2sc3486.pdf

2SC3488G

 8.4. Size:52K  sanyo
2sc3484.pdf

2SC3488G

 8.5. Size:37K  sanyo
2sc3483.pdf

2SC3488G

 8.6. Size:118K  sanyo
2sc3485.pdf

2SC3488G
2SC3488G

 8.7. Size:153K  jmnic
2sc3486.pdf

2SC3488G
2SC3488G

JMnic Product Specification Silicon NPN Power Transistors 2SC3486 DESCRIPTION With TO-3PN package High voltage ,high speed Wide area of safe operation APPLICATIONS For color TV display horizontal output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximu

 8.8. Size:199K  inchange semiconductor
2sc3482.pdf

2SC3488G
2SC3488G

isc Silicon NPN Power Transistor 2SC3482DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

 8.9. Size:199K  inchange semiconductor
2sc3481.pdf

2SC3488G
2SC3488G

isc Silicon NPN Power Transistor 2SC3481DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

 8.10. Size:198K  inchange semiconductor
2sc3486.pdf

2SC3488G
2SC3488G

isc Silicon NPN Power Transistor 2SC3486DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

 8.11. Size:199K  inchange semiconductor
2sc3480.pdf

2SC3488G
2SC3488G

isc Silicon NPN Power Transistor 2SC3480DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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