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2SC3494 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC3494
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 30 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 230 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: SPAK

 Búsqueda de reemplazo de transistor bipolar 2SC3494

 

2SC3494 Datasheet (PDF)

 ..1. Size:24K  hitachi
2sc3494.pdf

2SC3494
2SC3494

2SC3494Silicon NPN Epitaxial PlanarApplicationFM RF/IF amplifierOutlineSPAK1. Emitter122. Collector33. Base2SC3494Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 300 mWJunction temp

 8.1. Size:78K  1
2sc3498 2sc3499.pdf

2SC3494

 8.2. Size:91K  sanyo
2sc3495.pdf

2SC3494
2SC3494

Ordering number:EN1430BNPN Epitaxial Planar Silicon Transistor2SC3495High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions AF amplifier, various driver, muting circuit. unit:mm2003AFeatures [2SC3495] Adoption of FBET process. High DC current gain (hFE=500 to 2000). High breakdown voltage (VCEO 100V). Low collector-

 8.3. Size:98K  panasonic
2sc3496.pdf

2SC3494
2SC3494

Power Transistors2SC3496, 2SC3496ASilicon NPN triple diffusion planar typeFor power switchingUnit: mm8.50.2 3.40.36.00.2 1.00.1 Features High-speed switching High collector-base voltage (Emitter open) VCBO0 to 0.4 Satisfactory linearity of forward current transfer ratio hFER = 0.50.80.1 N type package enabling direct soldering of the radiatin

 8.4. Size:104K  tysemi
2sc3496a.pdf

2SC3494

SMD TypeSMD TypeSMD TypeSMD TypeSMD Type TransistorsSMD Type TransistorsProduct specification2SC3496ATO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesHigh-speed switchingHigh collector-base voltage (Emitter open) VCBO0.127+0.1 max0.80-0.1Satisfactory linearity of forward current transfer ratio hFE+0.12.3 0.60-0.11 Base+0

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC3420 | 2SA1052 | BC155 | 2SC1837 | 2SC3421Y

 

 
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