2N2006 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N2006
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 35 V
Tensión emisor-base (Veb): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.5 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 12
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar 2N2006
2N2006 Datasheet (PDF)
xm2n200.pdf
GOFORDXM2N200.DDescription The XM2N200.uses advanced trench technology and Gdesign to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features SSchematic diagram VDSS RDS(ON) ID @10V (typ) 190V 356.6m 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage an
sfp135n200c3 sfb132n200c3.pdf
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sfw132n200i3.pdf
SFW132N200I3 N-MOSFET 200V, 10.4m, 95A Features Product Summary N-channel, normal levelV 200V DS Enhanced avalanche ruggednessR 10.4m DS(on) Maximum 175C junction temperatureI 95A D100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/DC ConverterSFW132N200I3Package
Otros transistores... 2N1999 , 2N200 , 2N2000 , 2N2001 , 2N2002 , 2N2003 , 2N2004 , 2N2005 , TIP142 , 2N2007 , 2N2008 , 2N201 , 2N2015 , 2N2016 , 2N2017 , 2N2018 , 2N2019 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050