2SC3527 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SC3527DESCRIPTIONLow Collector Saturation VoltageHigh Collector CurrentGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and high voltageswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

Transistor2SC3526(H)Silicon NPN epitaxial planer typeFor display video outputUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.Wide current range. 0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 110 V+0.2 +0.2Collector to emitter voltage VCER* 100

Transistor2SC3526(H)Silicon NPN epitaxial planer typeFor display video outputUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.Wide current range. 0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 110 V+0.2 +0.2Collector to emitter voltage VCER* 100

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3528 DESCRIPTION With TO-3PFa package High collector current Low saturation voltage APPLICATIONS For high voltatge ,high speed power switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS V

isc Silicon NPN Power Transistor 2SC3528DESCRIPTIONLow Collector Saturation VoltageHigh Collector CurrentGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and high voltageswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll