2SC3563 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3563
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 400 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO220
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2SC3563 datasheet
2sc3563.pdf
isc Silicon NPN Power Transistor 2SC3563 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 450V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
2sc3569.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SC3569 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3569 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) voltage high-speed switching, and is ideal for use in drivers such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES Mold package that do
Otros transistores... 2SC3556, 2SC3557, 2SC3558, 2SC3559, 2SC356, 2SC3560, 2SC3561, 2SC3562, D667, 2SC3564, 2SC3565, 2SC3566, 2SC3567, 2SC3568, 2SC3569, 2SC3570, 2SC3571
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