2SC3563 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC3563

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 500 V

Tensión colector-emisor (Vce): 400 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO220

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2SC3563 datasheet

 ..1. Size:195K  inchange semiconductor
2sc3563.pdf pdf_icon

2SC3563

isc Silicon NPN Power Transistor 2SC3563 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 450V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.1. Size:172K  nec
2sc3567.pdf pdf_icon

2SC3563

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2sc3569.pdf pdf_icon

2SC3563

DATA SHEET SILICON POWER TRANSISTOR 2SC3569 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3569 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) voltage high-speed switching, and is ideal for use in drivers such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES Mold package that do

 8.3. Size:172K  nec
2sc3568.pdf pdf_icon

2SC3563

Otros transistores... 2SC3556, 2SC3557, 2SC3558, 2SC3559, 2SC356, 2SC3560, 2SC3561, 2SC3562, D667, 2SC3564, 2SC3565, 2SC3566, 2SC3567, 2SC3568, 2SC3569, 2SC3570, 2SC3571