2SC3564 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3564
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 120 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar 2SC3564
2SC3564 Datasheet (PDF)
2sc3569.pdf
DATA SHEETSILICON POWER TRANSISTOR2SC3569NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC3569 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)voltage high-speed switching, and is ideal for use in drivers such asswitching regulators, DC/DC converters, and high-frequency poweramplifiers.FEATURES Mold package that do
2sc3566.pdf
isc Silicon NPN Power Transistor 2SC3566DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXIM
2sc3565.pdf
isc Silicon NPN Power Transistor 2SC3565DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency high voltage amplifierand TV viedo output applications.ABSOLUTE MAXIMUM RATI
2sc3561.pdf
isc Silicon NPN Power Transistor 2SC3561DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 450V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sc3569.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3569DESCRIPTIONLow Collector Saturation VoltageHigh switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially suited for high voltage,high speed andhigh power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
2sc3568.pdf
isc Silicon NPN Power Transistor 2SC3568DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedComplement to Type 2SA1396Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
2sc3563.pdf
isc Silicon NPN Power Transistor 2SC3563DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 450V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SB596Y
History: 2SB596Y
Liste
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