2SC3570 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3570
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO220
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2SC3570 datasheet
2sc3570.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SC3570 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3570 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) voltage high-speed switching, and is ideal for use in drivers such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES Mold package that do
2sc3570.pdf
isc Silicon NPN Power Transistor 2SC3570 DESCRIPTION Collector-Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE M
2sc3576.pdf
Ordering number EN1799D NPN Epitaxial Planar Silicon Transistor 2SC3576 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions LF general-purpose amplifiers, various drivers, unit mm muting circuit. 2033 [2SC3576] Features Adoption of FBET process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation vo
Otros transistores... 2SC3562 , 2SC3563 , 2SC3564 , 2SC3565 , 2SC3566 , 2SC3567 , 2SC3568 , 2SC3569 , BD139 , 2SC3571 , 2SC3572 , 2SC3573 , 2SC3574 , 2SC3575 , 2SC3576 , 2SC3577 , 2SC3578 .
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