2SC3601E Todos los transistores

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2SC3601E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC3601E

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 7 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 200 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 400 MHz

Capacitancia de salida (Cc): 2.5 pF

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: TO126

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2SC3601E Datasheet (PDF)

3.1. 2sc3601.pdf Size:108K _sanyo

2SC3601E
2SC3601E

Ordering number:EN1766C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1407/2SC3601 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit:mm Video output. 2009B Color TV chroma output. [2SA1407/2SC3601] Wide-band amp. Features High fT : fT typ=400MHz. High breakdown voltage : VCEO? 200V.

4.1. 2sc3606.pdf Size:463K _toshiba

2SC3601E
2SC3601E

2SC3606 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3606 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Collector

4.2. 2sc3605.pdf Size:485K _toshiba

2SC3601E
2SC3601E

2SC3605 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3605 VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm FEATURES: Low Noise Figure, High Gain NF = 1.1dB, |S |2 = 10dB (f = 1GHz) 21e MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 3 V Collect

4.3. 2sc3607.pdf Size:468K _toshiba

2SC3601E
2SC3601E

2SC3607 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3607 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 9.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base cur

4.4. 2sc3600.pdf Size:136K _sanyo

2SC3601E
2SC3601E

Ordering number:EN1765A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1406/2SC3600 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit:mm Video output. 2009A Color TV chroma output. [2SA1406/2SC3600] Wide-band amp. Features High fT : fT typ=400MHz. High breakdown voltage : VCEO? 200V.

4.5. 2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf Size:218K _nec

2SC3601E
2SC3601E

NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applica- ti

4.6. ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf Size:257K _nec

2SC3601E
2SC3601E

NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz LOW NOISE FIGURE: 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise

4.7. 2sc3603.pdf Size:89K _nec

2SC3601E
2SC3601E

DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm) noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and E has a wide dynamic range. FEATURES 3.8 MIN. 3.8 MIN.

4.8. 2sc3604.pdf Size:94K _nec

2SC3601E
2SC3601E

DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm) noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and E has a wide dynamic range. FEATURES 3.8 MIN. 3.8 MIN.

4.9. 2sc3608.pdf Size:179K _no

2SC3601E

4.10. 2sc3606.pdf Size:1704K _kexin

2SC3601E
2SC3601E

SMD Type Transistors NPN Transistors 2SC3606 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=80mA 1 2 ● Collector Emitter Voltage VCEO=12V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

4.11. 2sc3607.pdf Size:1604K _kexin

2SC3601E
2SC3601E

SMD Type Transistors NPN Transistors 2SC3607 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=80mA ● Collector Emitter Voltage VCEO=12V ● Marking : MH 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter

Otros transistores... 2SC3600 , 2SC3600C , 2SC3600D , 2SC3600E , 2SC3600F , 2SC3601 , 2SC3601C , 2SC3601D , 2N60 , 2SC3601F , 2SC3602 , 2SC3603 , 2SC3604 , 2SC3605 , 2SC3606 , 2SC3607 , 2SC3608 .

 


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