2SC3619 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SC3619DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching and amplifier applications.Color TV horizontal driver applications.Color TV chroma output applications.ABSOL

Power Transistors2SC3611Silicon NPN epitaxial planar typeUnit: mmFor video amplifier8.0+0.50.13.20.2 3.160.1 Features High transition frequency fT Small collector output capacitance Cob Wide current range TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings TC = 25C0.750.10.50.

SMD Type TransistorsNPN Transistors2SC3618SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.7A Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SC3617SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE