2SC3621 Todos los transistores

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 2sc3621.pdf

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 2sc3621.pdf

isc Silicon NPN Power Transistor 2SC3621 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage Complementary to 2SA1408 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV vert.deflection output application Color TV class B sound output application ABSOLUTE MAXIMUM RATINGS(T =25 )

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 2sc3620.pdf

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 2sc3623 2sc3623a.pdf

DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) High hFE hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat) VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO VEBO 12 V (2SC3623) VEBO 15 V (2SC3623A) ABSOLUTE MAXIMUM RATINGS (Ta = 25 C

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 2sc3622 2sc3622a.pdf

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 2sc3622.pdf

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 2sc3623.pdf

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 2sc3624 2sc3624 2sc3624a.pdf

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 2sc3624.pdf

SMD Type Transistors NPN Transistors 2SC3624 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Coll

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 2sc3624a.pdf

SMD Type Transistors NPN Transistors 2SC3624A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Col

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 2sc3627.pdf

isc Silicon NPN Power Transistor 2SC3627 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 8.10. Size:195K  inchange semiconductor
 2sc3626.pdf

isc Silicon NPN Power Transistor 2SC3626 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S