2SC3623 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3623
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 60 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: SPAK
Búsqueda de reemplazo de transistor bipolar 2SC3623
2SC3623 Datasheet (PDF)
2sc3623 2sc3623a.pdf
DATA SHEETSILICON TRANSISTORS2SC3623, 3623ANPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) High hFE:hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat):VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO:VEBO: 12 V (2SC3623)VEBO: 15 V (2SC3623A)ABSOLUTE MAXIMUM RATINGS (Ta = 25C
2sc3622 2sc3622a.pdf
DATA SHEETSILICON TRANSISTORS2SC3622, 3622ANPN SILICON EPITAXIAL TRANSISTORFOR LOWFREQUENCY POWER AMPLIFIERS AND SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) High hFE:hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat):VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO:VEBO: 12 V (2SC3622)VEBO: 15 V (2SC3622A)ABSOLUTE MAXIMUM RATINGS (Ta = 25
2sc3624.pdf
SMD Type TransistorsNPN Transistors2SC3624SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Coll
2sc3624a.pdf
SMD Type TransistorsNPN Transistors2SC3624ASOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Col
2sc3627.pdf
isc Silicon NPN Power Transistor 2SC3627DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
2sc3626.pdf
isc Silicon NPN Power Transistor 2SC3626DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
2sc3621.pdf
isc Silicon NPN Power Transistor 2SC3621DESCRIPTIONLow Collector Saturation VoltageHigh breakdown voltageComplementary to 2SA1408100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV vert.deflection output applicationColor TV class B sound output applicationABSOLUTE MAXIMUM RATINGS(T =25)
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: PN3013 | 2SB1122U | 1702
History: PN3013 | 2SB1122U | 1702
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050