2SC3627 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC3627

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 250 V

Tensión colector-emisor (Vce): 250 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO220

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2SC3627 datasheet

 ..1. Size:196K  inchange semiconductor
2sc3627.pdf pdf_icon

2SC3627

isc Silicon NPN Power Transistor 2SC3627 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 8.1. Size:206K  toshiba
2sc3621.pdf pdf_icon

2SC3627

 8.2. Size:212K  toshiba
2sc3620.pdf pdf_icon

2SC3627

 8.3. Size:128K  nec
2sc3623 2sc3623a.pdf pdf_icon

2SC3627

DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) High hFE hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat) VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO VEBO 12 V (2SC3623) VEBO 15 V (2SC3623A) ABSOLUTE MAXIMUM RATINGS (Ta = 25 C

Otros transistores... 2SC3622, 2SC3622A, 2SC3623, 2SC3623A, 2SC3624, 2SC3624A, 2SC3625, 2SC3626, D882P, 2SC3628, 2SC3629, 2SC363, 2SC3630, 2SC3631, 2SC3632, 2SC3633, 2SC3634