2SC3632 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SC3632DESCRIPTIONHigh Collector-Emitter VoltageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 600 VCBOV Collector-Em

SMD Type TransistorsNPN Transistors2SC3632-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High voltage High speed0.127+0.10.80-0.1max Complementary to 2SA1413-Z+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collec

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3632-ZDESCRIPTIONWith TO-252(DPAK) packagingHigh collector-emitter voltageLow collector saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo

Ordering number:EN1637CNPN Triple Diffused Planar Silicon Transistor2SC3638Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High reliability (Adoption of HVP process).unit:mm Fast speed.2022A High breakdown voltage.[2SC3638] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpe

Ordering number:EN1614CNPN Triple Diffused Planar Silicon Transistor2SC3636Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High reliability (Adoption of HVP process).unit:mm Fast speed.2022A High breakdown voltage.[2SC3636] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpe

Ordering number:EN1615CNPN Triple Diffused Planar Silicon Transistor2SC3637Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High reliability (Adoption of HVP process).unit:mm Fast speed.2022A High breakdown voltage.[2SC3637] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpe

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

JMnic Product Specification Silicon NPN Power Transistors 2SC3638 DESCRIPTION With TO-3PN package High voltage ,high speed High reliability APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbs

JMnic Product Specification Silicon NPN Power Transistors 2SC3637 DESCRIPTION With TO-3PN package High voltage ,high speed High reliability APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbs

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3631-ZDESCRIPTIONWith TO-252(DPAK) packagingExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay driversHigh-speed invertersConvertersHigh current switching a

isc Silicon NPN Power Transistor 2SC3638DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 500V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RAT

isc Silicon NPN Power Transistor 2SC3636DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 500V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RAT

isc Silicon NPN Power Transistor 2SC3637DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 500V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RAT