2SC3643 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number:EN1627CNPN Triple Diffused Planar Silicon Transistor2SC3643Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High reliability (Adoption of HVP process).unit:mm Fast speed.2022A High breakdown voltage.[2SC3643] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpe

Ordering number:EN1788APNP/NPN Epitaxial Planar Silicon Transistors2SA1418/2SC3648High-Voltage Switching,Predriver ApplicationsApplications Package Dimensions Color TV audio output, inverter. unit:mm2038Features [2SA1418/2SC3648] Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Very small size marki

Ordering number:EN2006APNP/NPN Epitaxial Planar Silicon Transistors2SA1417/2SC3647High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage and large current capacity.2038 Fast switching time.[2SA1417/2SC3647] Very small size making it easy to provide high-density, small-sized hybrid ICs.E

Ordering number:EN1626CNPN Triple Diffused Planar Silicon Transistor2SC3642Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High reliability (Adoption of HVP process).unit:mm Fast speed.2022A High breakdown voltage.[2SC3642] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpe

Ordering number:EN1628CNPN Triple Diffused Planar Silicon Transistor2SC3644Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High reliability (Adoption of HVP process).unit:mm High speed.2022A High breakdown voltage.[2SC3644] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpe

Ordering number : EN2005B2SA1416 / 2SC3646SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1416 / 2SC3646High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC

Ordering number : EN2006C2SA1417 / 2SC3647SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsHigh-Voltage Switching2SA1417 / 2SC3647ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.Specifications ( ) : 2S

Ordering number:EN2007APNP/NPN Epitaxial Planar Silicon Transistors2SA1419/2SC3649High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage and large current capacity.2038 Very small size making it easy to provide high-[2SA1419/2SC3649]density hybrid ICs.E : EmitterC : CollectorB : Base(

Ordering number : EN1788B2SA1418 / 2SC3648SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsHigh-Voltage Switching,2SA1418 / 2SC3648Preriver ApplicationsApplications Color TV audio output, inverter.Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall siz

Ordering number : EN2007B2SA1419 / 2SC3649SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1419 / 2SC3649High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs.Specifications ( ) :

Ordering number:EN2005APNP/NPN Epitaxial Planar Silicon Transistors2SA1416/2SC3646High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage and large current capacity.2038 Fast switching time.[2SA1416/2SC3646] Very small size making it easy to provide high-density, small-sized hybrid ICs.E

DATA SHEETwww.onsemi.comBipolar TransistorELECTRICAL CONNECTION22()100 V, ()1 A, Low VCE(sat), (PNP)NPN Single PCP1: Base1 12: Collector3: Emitter2SA1416, 2SC36463 32SA1416 2SC3646Features Adoption of FBET and MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed12 Ultrasmall Size Making it Easy to Provi

Ordering number : EN1788C2SA1418/2SC3648Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 0.7A, Low VCE sat , PNP NPN Single PCPApplicaitons Color TV audio output, inverterFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-

Ordering number : EN2005C2SA1416/2SC3646Bipolar Transistorhttp://onsemi.com() ) ( ), (100V, ( 1A, Low VCE sat PNP)NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1416Absol

DATA SHEETwww.onsemi.comBipolar Transistor12(-)100 V, (-)2 A, Low VCE(sat),3SOT-89-3(PNP) NPN Single PCPCASE 419AU2SA1417, 2SC3647ELECTRICAL CONNECTIONFeatures2 2 Adoption of FBET, MBIT Processes1 : Base High Breakdown Voltage and Large Current Capacity1 1 2 : Collector Ultrasmall Size Making it Easy to Provide High-density Small-sized3 : Emitter

Ordering number : EN2006D2SA1417/2SC3647Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICsSpecifications ( ) : 2SA1417Absolute Maximum Rati

Ordering number : EN1788C2SA1418/2SC3648Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 0.7A, Low VCE sat , PNP NPN Single PCPApplicaitons Color TV audio output, inverterFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-

Ordering number : EN2007C2SA1419/2SC3649Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1419Absolute Maximum Ratings at

Ordering number : EN2007C2SA1419/2SC3649Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1419Absolute Maximum Ratings at

UNISONIC TECHNOLOGIES CO., LTD 2SC3648 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING PREDRIVER APPLICATIONS FEATURES * High Breakdown Voltage and Large Current Capacity * Fast Switching Speed 1* Over Current Protection Function SOT-89 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 32SC3648G-x-AB3-R SOT-89 B C E Tape ReelNote: Pin Ass

UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high density, small-sized hybrid ICs 1SOT-89Lead-free: 2SC3647LHalogen-free: 2SC3647G ORDERING INFORMATION Ordering Number Pin Assignment

SMD Type TransistorsNPN Transistors2SC36481.70 0.1 Features High breakdown voltage and large current capacity. Fast switching speed. Complementary to 2SA14180.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter

SMD Type TransistorsNPN Transistors2SC36471.70 0.1 Features High breakdown voltage and large current capacity. Complementary to 2SA14170.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage VEBO 6 Coll

SMD Type TransistorsNPN Transistors2SC36491.70 0.1 Features High breakdown voltage and large current capacity. Complementary to 2SA14190.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Coll

SMD Type TransistorsNPN Transistors2SC36451.70 0.1 Features High breakdown voltage Excellent linearity of hFE and small Cob. Fast switching speed.0.42 0.10.46 0.1 Small Package For Mounting Complementary to 2SA14151.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 18

SMD Type TransistorsNPN Transistors2SC36461.70 0.1 Features High breakdown voltage and large current capacity. Fast switching speed. Complementary to 2SA14160.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3642DESCRIPTIONLow Collector Saturation VoltageHigh breakdown voltage and high reliabilityFast switching speedWide ASONPN triple diffused planar silicon transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh deflection d

isc Silicon NPN Power Transistor 2SC3640DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast SpeedHigh reliabilityAdoption of MBIT processMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO