2SC3644 Todos los transistores

 

2SC3644 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC3644

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 1200 V

Tensión colector-emisor (Vce): 800 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: TO247

Búsqueda de reemplazo de transistor bipolar 2SC3644

 

2SC3644 Datasheet (PDF)

1.1. 2sc3644.pdf Size:120K _sanyo

2SC3644
2SC3644

Ordering number:EN1628C NPN Triple Diffused Planar Silicon Transistor 2SC3644 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit:mm High speed. 2022A High breakdown voltage. [2SC3644] Adoption of MBIT process. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specificat

4.1. 2sc3649t-td-e.pdf Size:220K _update

2SC3644
2SC3644

Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor http://onsemi.com (–) (–) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Specifications ( ) : 2SA1419 Absolute Maximum Ratings at

4.2. 2sc3647s-td-e.pdf Size:213K _update

2SC3644
2SC3644

Ordering number : EN2006D 2SA1417/2SC3647 Bipolar Transistor http://onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) : 2SA1417 Absolute Maximum Rati

 4.3. 2sc3649s-td-e.pdf Size:220K _update

2SC3644
2SC3644

Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor http://onsemi.com (–) (–) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Specifications ( ) : 2SA1419 Absolute Maximum Ratings at

4.4. 2sc3648s-td-e.pdf Size:217K _update

2SC3644
2SC3644

Ordering number : EN1788C 2SA1418/2SC3648 Bipolar Transistor http://onsemi.com (–) (–) ( ) ( ) 160V, 0.7A, Low VCE sat , PNP NPN Single PCP Applicaitons • Color TV audio output, inverter Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-

 4.5. 2sc3649s-td-h.pdf Size:220K _update

2SC3644
2SC3644

Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor http://onsemi.com (–) (–) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Specifications ( ) : 2SA1419 Absolute Maximum Ratings at

4.6. 2sc3648t-td-e.pdf Size:217K _update

2SC3644
2SC3644

Ordering number : EN1788C 2SA1418/2SC3648 Bipolar Transistor http://onsemi.com (–) (–) ( ) ( ) 160V, 0.7A, Low VCE sat , PNP NPN Single PCP Applicaitons • Color TV audio output, inverter Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-

4.7. 2sc3647t-td-e.pdf Size:213K _update

2SC3644
2SC3644

Ordering number : EN2006D 2SA1417/2SC3647 Bipolar Transistor http://onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) : 2SA1417 Absolute Maximum Rati

4.8. 2sc3646t-td-e.pdf Size:224K _update

2SC3644
2SC3644

Ordering number : EN2005C 2SA1416/2SC3646 Bipolar Transistor http://onsemi.com (–) –) ( ), ( 100V, ( 1A, Low VCE sat PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Specifications ( ) : 2SA1416 Absol

4.9. 2sc3646s-td-e.pdf Size:224K _update

2SC3644
2SC3644

Ordering number : EN2005C 2SA1416/2SC3646 Bipolar Transistor http://onsemi.com (–) –) ( ), ( 100V, ( 1A, Low VCE sat PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Specifications ( ) : 2SA1416 Absol

4.10. 2sc3649t-td-h.pdf Size:220K _update

2SC3644
2SC3644

Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor http://onsemi.com (–) (–) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Specifications ( ) : 2SA1419 Absolute Maximum Ratings at

4.11. 2sa1417 2sc3647.pdf Size:57K _sanyo

2SC3644
2SC3644

Ordering number : EN2006C 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching 2SA1417 / 2SC3647 Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs. Specifications ( ) : 2SA1417 Ab

4.12. 2sc3648.pdf Size:119K _sanyo

2SC3644
2SC3644

Ordering number:EN1788A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1418/2SC3648 High-Voltage Switching, Predriver Applications Applications Package Dimensions Color TV audio output, inverter. unit:mm 2038 Features [2SA1418/2SC3648] Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Very small size marking it ea

4.13. 2sc3649.pdf Size:143K _sanyo

2SC3644
2SC3644

Ordering number:EN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit:mm High breakdown voltage and large current capacity. 2038 Very small size making it easy to provide high- [2SA1419/2SC3649] density hybrid ICs. E : Emitter C : Collector B : Base ( ) : 2S

4.14. 2sc3646.pdf Size:139K _sanyo

2SC3644
2SC3644

Ordering number:EN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit:mm High breakdown voltage and large current capacity. 2038 Fast switching time. [2SA1416/2SC3646] Very small size making it easy to provide high- density, small-sized hybrid ICs. E : Emit

4.15. 2sa1419 2sc3649.pdf Size:305K _sanyo

2SC3644
2SC3644

Ordering number : EN2007B 2SA1419 / 2SC3649 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1419 / 2SC3649 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs. Specifications ( ) : 2SA1419 A

4.16. 2sa1416 2sc3646.pdf Size:102K _sanyo

2SC3644
2SC3644

Ordering number : EN2005B 2SA1416 / 2SC3646 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1416 / 2SC3646 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs. Specif

4.17. 2sc3647.pdf Size:141K _sanyo

2SC3644
2SC3644

Ordering number:EN2006A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1417/2SC3647 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit:mm High breakdown voltage and large current capacity. 2038 Fast switching time. [2SA1417/2SC3647] Very small size making it easy to provide high- density, small-sized hybrid ICs. E : Emit

4.18. 2sc3642.pdf Size:118K _sanyo

2SC3644
2SC3644

Ordering number:EN1626C NPN Triple Diffused Planar Silicon Transistor 2SC3642 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit:mm Fast speed. 2022A High breakdown voltage. [2SC3642] Adoption of MBIT process. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specificat

4.19. 2sc3643.pdf Size:114K _sanyo

2SC3644
2SC3644

Ordering number:EN1627C NPN Triple Diffused Planar Silicon Transistor 2SC3643 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit:mm Fast speed. 2022A High breakdown voltage. [2SC3643] Adoption of MBIT process. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specificat

4.20. 2sa1418 2sc3648.pdf Size:96K _sanyo

2SC3644
2SC3644

Ordering number : EN1788B 2SA1418 / 2SC3648 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, 2SA1418 / 2SC3648 Preriver Applications Applications Color TV audio output, inverter. Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall size making it e

4.21. 2sc3648.pdf Size:228K _utc

2SC3644
2SC3644

UNISONIC TECHNOLOGIES CO., LTD 2SC3648 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING PREDRIVER APPLICATIONS FEATURES * High Breakdown Voltage and Large Current Capacity * Fast Switching Speed 1 * Over Current Protection Function SOT-89 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 2SC3648-x-AB3-R 2SC3648L-x-AB3-

4.22. 2sc3647.pdf Size:330K _utc

2SC3644
2SC3644

UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high – density, small-sized hybrid ICs 1 SOT-89 Lead-free: 2SC3647L Halogen-free: 2SC3647G ORDERING INFORMATION Ordering Number Pin Assignment P

4.23. 2sc3648.pdf Size:1095K _kexin

2SC3644
2SC3644

SMD Type Transistors NPN Transistors 2SC3648 1.70 0.1 ■ Features ● High breakdown voltage and large current capacity. ● Fast switching speed. ● Complementary to 2SA1418 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter

4.24. 2sc3649.pdf Size:1128K _kexin

2SC3644
2SC3644

SMD Type Transistors NPN Transistors 2SC3649 1.70 0.1 ■ Features ● High breakdown voltage and large current capacity. ● Complementary to 2SA1419 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Coll

4.25. 2sc3646.pdf Size:1097K _kexin

2SC3644
2SC3644

SMD Type Transistors NPN Transistors 2SC3646 1.70 0.1 ■ Features ● High breakdown voltage and large current capacity. ● Fast switching speed. ● Complementary to 2SA1416 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter

4.26. 2sc3645.pdf Size:1383K _kexin

2SC3644
2SC3644

SMD Type Transistors NPN Transistors 2SC3645 1.70 0.1 ■ Features ● High breakdown voltage ● Excellent linearity of hFE and small Cob. ● Fast switching speed. 0.42 0.1 0.46 0.1 ● Small Package For Mounting ● Complementary to 2SA1415 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 18

4.27. 2sc3647.pdf Size:1059K _kexin

2SC3644
2SC3644

SMD Type Transistors NPN Transistors 2SC3647 1.70 0.1 ■ Features ● High breakdown voltage and large current capacity. ● Complementary to 2SA1417 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage VEBO 6 Coll

Otros transistores... 2SC3637 , 2SC3638 , 2SC3639 , 2SC364 , 2SC3640 , 2SC3641 , 2SC3642 , 2SC3643 , TIP31 , 2SC3645 , 2SC3645R , 2SC3645S , 2SC3645T , 2SC3646 , 2SC3646R , 2SC3646S , 2SC3646T .

 
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