2SC3646S Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC3646S

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 MHz

Capacitancia de salida (Cc): 8.5 pF

Ganancia de corriente contínua (hFE): 140

Encapsulados: SOT89

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2SC3646S datasheet

 ..1. Size:224K  onsemi
 2sa1416s 2sa1416t 2sc3646s 2sc3646t.pdf pdf_icon

2SC3646S

Ordering number EN2005C 2SA1416/2SC3646 Bipolar Transistor http //onsemi.com ( ) ) ( ), ( 100V, ( 1A, Low VCE sat PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1416 Absol

 7.1. Size:102K  sanyo
 2sa1416 2sc3646.pdf pdf_icon

2SC3646S

Ordering number EN2005B 2SA1416 / 2SC3646 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1416 / 2SC3646 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC

 7.2. Size:139K  sanyo
 2sc3646.pdf pdf_icon

2SC3646S

Ordering number EN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage and large current capacity. 2038 Fast switching time. [2SA1416/2SC3646] Very small size making it easy to provide high- density, small-sized hybrid ICs. E

 7.3. Size:155K  onsemi
 2sa1416 2sc3646.pdf pdf_icon

2SC3646S

DATA SHEET www.onsemi.com Bipolar Transistor ELECTRICAL CONNECTION 2 2 ( )100 V, ( )1 A, Low VCE(sat), (PNP)NPN Single PCP 1 Base 1 1 2 Collector 3 Emitter 2SA1416, 2SC3646 3 3 2SA1416 2SC3646 Features Adoption of FBET and MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed 1 2 Ultrasmall Size Making it Easy to Provi

MOSTRAR MÁS

Otros transistores... 2SC3643, 2SC3644, 2SC3645, 2SC3645R, 2SC3645S, 2SC3645T, 2SC3646, 2SC3646R, TIP122, 2SC3646T, 2SC3647, 2SC3647R, 2SC3647S, 2SC3647T, 2SC3648, 2SC3648R, 2SC3648S