2SC3647S
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3647S
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5
W
Tensión colector-base (Vcb): 120
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120
MHz
Capacitancia de salida (Cc): 16
pF
Ganancia de corriente contínua (hfe): 140
Paquete / Cubierta:
SOT89
Búsqueda de reemplazo de transistor bipolar 2SC3647S
2SC3647S
Datasheet (PDF)
..1. Size:213K onsemi
2sa1417s 2sa1417t 2sc3647s 2sc3647t.pdf
Ordering number : EN2006D2SA1417/2SC3647Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICsSpecifications ( ) : 2SA1417Absolute Maximum Rati
7.1. Size:141K sanyo
2sc3647.pdf
Ordering number:EN2006APNP/NPN Epitaxial Planar Silicon Transistors2SA1417/2SC3647High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage and large current capacity.2038 Fast switching time.[2SA1417/2SC3647] Very small size making it easy to provide high-density, small-sized hybrid ICs.E
7.2. Size:57K sanyo
2sa1417 2sc3647.pdf
Ordering number : EN2006C2SA1417 / 2SC3647SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsHigh-Voltage Switching2SA1417 / 2SC3647ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.Specifications ( ) : 2S
7.3. Size:158K onsemi
2sa1417 2sc3647.pdf
DATA SHEETwww.onsemi.comBipolar Transistor12(-)100 V, (-)2 A, Low VCE(sat),3SOT-89-3(PNP) NPN Single PCPCASE 419AU2SA1417, 2SC3647ELECTRICAL CONNECTIONFeatures2 2 Adoption of FBET, MBIT Processes1 : Base High Breakdown Voltage and Large Current Capacity1 1 2 : Collector Ultrasmall Size Making it Easy to Provide High-density Small-sized3 : Emitter
7.4. Size:330K utc
2sc3647.pdf
UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high density, small-sized hybrid ICs 1SOT-89Lead-free: 2SC3647LHalogen-free: 2SC3647G ORDERING INFORMATION Ordering Number Pin Assignment
7.5. Size:1059K kexin
2sc3647.pdf
SMD Type TransistorsNPN Transistors2SC36471.70 0.1 Features High breakdown voltage and large current capacity. Complementary to 2SA14170.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage VEBO 6 Coll
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