2SC3649 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3649
Código: CER_CES_CET
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 120 MHz
Capacitancia de salida (Cc): 14 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: SOT89
Búsqueda de reemplazo de 2SC3649
- Selecciónⓘ de transistores por parámetros
2SC3649 datasheet
..1. Size:143K sanyo
2sc3649.pdf 
Ordering number EN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage and large current capacity. 2038 Very small size making it easy to provide high- [2SA1419/2SC3649] density hybrid ICs. E Emitter C Collector B Base (
..2. Size:305K sanyo
2sa1419 2sc3649.pdf
Ordering number EN2007B 2SA1419 / 2SC3649 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1419 / 2SC3649 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s. Specifications ( )
..3. Size:356K onsemi
2sa1419 2sc3649.pdf
Ordering number EN2007C 2SA1419/2SC3649 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1419 Absolute Maximum Ratings at
..4. Size:1128K kexin
2sc3649.pdf
SMD Type Transistors NPN Transistors 2SC3649 1.70 0.1 Features High breakdown voltage and large current capacity. Complementary to 2SA1419 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Coll
0.1. Size:220K onsemi
2sa1419s 2sa1419s-td-h 2sa1419t 2sa1419t-td-h 2sc3649s 2sc3649s-td-h 2sc3649t 2sc3649t-td-h.pdf
Ordering number EN2007C 2SA1419/2SC3649 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1419 Absolute Maximum Ratings at
8.1. Size:119K sanyo
2sc3648.pdf
Ordering number EN1788A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1418/2SC3648 High-Voltage Switching, Predriver Applications Applications Package Dimensions Color TV audio output, inverter. unit mm 2038 Features [2SA1418/2SC3648] Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Very small size marki
8.2. Size:141K sanyo
2sc3647.pdf
Ordering number EN2006A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1417/2SC3647 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage and large current capacity. 2038 Fast switching time. [2SA1417/2SC3647] Very small size making it easy to provide high- density, small-sized hybrid ICs. E
8.3. Size:118K sanyo
2sc3642.pdf
Ordering number EN1626C NPN Triple Diffused Planar Silicon Transistor 2SC3642 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm Fast speed. 2022A High breakdown voltage. [2SC3642] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Spe
8.4. Size:120K sanyo
2sc3644.pdf
Ordering number EN1628C NPN Triple Diffused Planar Silicon Transistor 2SC3644 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm High speed. 2022A High breakdown voltage. [2SC3644] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Spe
8.5. Size:102K sanyo
2sa1416 2sc3646.pdf
Ordering number EN2005B 2SA1416 / 2SC3646 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1416 / 2SC3646 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC
8.6. Size:57K sanyo
2sa1417 2sc3647.pdf
Ordering number EN2006C 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching 2SA1417 / 2SC3647 Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs. Specifications ( ) 2S
8.7. Size:114K sanyo
2sc3643.pdf
Ordering number EN1627C NPN Triple Diffused Planar Silicon Transistor 2SC3643 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm Fast speed. 2022A High breakdown voltage. [2SC3643] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Spe
8.8. Size:96K sanyo
2sa1418 2sc3648.pdf
Ordering number EN1788B 2SA1418 / 2SC3648 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, 2SA1418 / 2SC3648 Preriver Applications Applications Color TV audio output, inverter. Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall siz
8.9. Size:139K sanyo
2sc3646.pdf
Ordering number EN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage and large current capacity. 2038 Fast switching time. [2SA1416/2SC3646] Very small size making it easy to provide high- density, small-sized hybrid ICs. E
8.10. Size:155K onsemi
2sa1416 2sc3646.pdf
DATA SHEET www.onsemi.com Bipolar Transistor ELECTRICAL CONNECTION 2 2 ( )100 V, ( )1 A, Low VCE(sat), (PNP)NPN Single PCP 1 Base 1 1 2 Collector 3 Emitter 2SA1416, 2SC3646 3 3 2SA1416 2SC3646 Features Adoption of FBET and MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed 1 2 Ultrasmall Size Making it Easy to Provi
8.11. Size:217K onsemi
2sa1418s 2sc3648s 2sc3648t.pdf
Ordering number EN1788C 2SA1418/2SC3648 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 0.7A, Low VCE sat , PNP NPN Single PCP Applicaitons Color TV audio output, inverter Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-
8.12. Size:224K onsemi
2sa1416s 2sa1416t 2sc3646s 2sc3646t.pdf
Ordering number EN2005C 2SA1416/2SC3646 Bipolar Transistor http //onsemi.com ( ) ) ( ), ( 100V, ( 1A, Low VCE sat PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1416 Absol
8.13. Size:158K onsemi
2sa1417 2sc3647.pdf
DATA SHEET www.onsemi.com Bipolar Transistor 1 2 (-)100 V, (-)2 A, Low VCE(sat), 3 SOT-89-3 (PNP) NPN Single PCP CASE 419AU 2SA1417, 2SC3647 ELECTRICAL CONNECTION Features 2 2 Adoption of FBET, MBIT Processes 1 Base High Breakdown Voltage and Large Current Capacity 1 1 2 Collector Ultrasmall Size Making it Easy to Provide High-density Small-sized 3 Emitter
8.14. Size:213K onsemi
2sa1417s 2sa1417t 2sc3647s 2sc3647t.pdf
Ordering number EN2006D 2SA1417/2SC3647 Bipolar Transistor http //onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) 2SA1417 Absolute Maximum Rati
8.15. Size:343K onsemi
2sa1418 2sc3648.pdf
Ordering number EN1788C 2SA1418/2SC3648 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 0.7A, Low VCE sat , PNP NPN Single PCP Applicaitons Color TV audio output, inverter Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-
8.16. Size:237K utc
2sc3648.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC3648 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING PREDRIVER APPLICATIONS FEATURES * High Breakdown Voltage and Large Current Capacity * Fast Switching Speed 1 * Over Current Protection Function SOT-89 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 2SC3648G-x-AB3-R SOT-89 B C E Tape Reel Note Pin Ass
8.17. Size:330K utc
2sc3647.pdf
UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high density, small-sized hybrid ICs 1 SOT-89 Lead-free 2SC3647L Halogen-free 2SC3647G ORDERING INFORMATION Ordering Number Pin Assignment
8.18. Size:1095K kexin
2sc3648.pdf
SMD Type Transistors NPN Transistors 2SC3648 1.70 0.1 Features High breakdown voltage and large current capacity. Fast switching speed. Complementary to 2SA1418 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter
8.19. Size:1059K kexin
2sc3647.pdf
SMD Type Transistors NPN Transistors 2SC3647 1.70 0.1 Features High breakdown voltage and large current capacity. Complementary to 2SA1417 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage VEBO 6 Coll
8.20. Size:1383K kexin
2sc3645.pdf
SMD Type Transistors NPN Transistors 2SC3645 1.70 0.1 Features High breakdown voltage Excellent linearity of hFE and small Cob. Fast switching speed. 0.42 0.1 0.46 0.1 Small Package For Mounting Complementary to 2SA1415 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 18
8.21. Size:1097K kexin
2sc3646.pdf
SMD Type Transistors NPN Transistors 2SC3646 1.70 0.1 Features High breakdown voltage and large current capacity. Fast switching speed. Complementary to 2SA1416 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter
8.22. Size:187K inchange semiconductor
2sc3642.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3642 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage and high reliability Fast switching speed Wide ASO NPN triple diffused planar silicon transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh deflection d
8.23. Size:198K inchange semiconductor
2sc3640.pdf
isc Silicon NPN Power Transistor 2SC3640 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Speed High reliability Adoption of MBIT process Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
Otros transistores... 2SC3647, 2SC3647R, 2SC3647S, 2SC3647T, 2SC3648, 2SC3648R, 2SC3648S, 2SC3648T, A1941, 2SC3649R, 2SC3649S, 2SC3649T, 2SC3650, 2SC3651, 2SC3652, 2SC3653, 2SC3654
