2SC3657 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SC3657DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

Ordering number:EN1779ANPN Epitaxial Planar Silicon Transistor2SC3651High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions LF amplifiers, various drivers, muting circuit. unit:mm2038Features [2SC3651] High DC current gain (hFE=500 to 2000). High breakdown voltage (VCEO 100V). Low collector-to-emitter saturation voltage

Ordering number:EN1780ANPN Epitaxial Planar Silicon Transistor2SC3650High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions LF amplifiers, various drivers, muting circuit. unit:mm2038Features [2SC3650] High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage(VCE(sat) 0.5V). Large current capa

2SC3650 1.2 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package. 4 Large Current Capacity. High DC Current Gain 123A Low VCE(sat) ECB DAPPLICATION F GLF Amplifiers, Various Drivers, Muting Circuit H KJ LMillimeter Mi

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate TransistorsSOT-89-3L 2SC3650 TRANSISTOR (NPN)1. BASEFEATURES2. COLLECTOR Small Flat Package High DC Current Gain3. EMITTER Low VCE(sat) Large Current CapacityAPPLICATIONS LF Amplifiers, Various Drivers, Muting CircuitMARKING:CF MAXIMUM RATINGS (Ta=25 unless otherwise n

JMnic Product Specification Silicon NPN Power Transistors 2SC3658 DESCRIPTION With TO-3 package High voltage ,high speed Built-in damper diode APPLICATIONS For color TV horizontal deflection output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PAR

2S 3650C SOT-89-3L TRANSISTOR (NPN)1. BASE FEATURES 2. COLLECTOR Small Flat Package High DC Current Gain 3. EMITTER Low VCE(sat) Large Current Capacity APPLICATIONS LF Amplifiers, Various Drivers, Muting Circuit MARKING:CF MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBOV Col

SMD Type TransistorsNPN Transistors2SC3651SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=100V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage

SMD Type TransistorsNPN Transistors2SC3650SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.2A Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VE

isc Silicon NPN Power Transistor 2SC3659DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CESBuilt-in Damper DidoeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 1700

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3658DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CESBuilt-in Damper Didoe100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM