2SC367 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SC367
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.4 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 60 MHz
   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO92

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2SC367 Datasheet (PDF)

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Ordering number:EN1801ENPN Triple Diffused Planar Silicon Transistor2SC3676900V/300mA High-Voltage AmplifierHigh-Voltage Switching ApplicationsApplications Package Dimensions High voltage amplifiers.unit:mm High-voltage switching applications.2010C Dynamic focus applications.[2SC3676]Features High breakdown voltage (VCEO min=900V). Small Cob (Cob typ=5

0.6. Size:97K sanyo
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Ordering number:EN1800ENPN Triple Diffused Planar Silicon Transistor2SC3675900V/100mA High-Voltage AmplifierHigh-Voltage Switching ApplicationsApplications Package Dimensions High voltage amplifiers.unit:mm High-voltage switching applications.2010C Dynamic focus applications.[2SC3675]Features High breakdown voltage (VCEO min=900V). Small Cob (Cob typ=2

0.7. Size:178K jmnic
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JMnic Product Specification Silicon NPN Power Transistors 2SC3679 DESCRIPTION With TO-3PN package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings (Ta=25)

0.8. Size:93K jmnic
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3678 ESCRIPTION High Voltage Switching With TO-3PN package APPLICATIONS Switching Regulator General Purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CON

0.9. Size:25K sanken-ele
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2SC3679Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor)Application : Switching Regulator and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC3679 Symbol Conditions 2SC3679 UnitUnit0.24.80.415.60.19.6 2.0VCBO 900 ICBO VCB=800V 100max AVVCEO 80

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2SC3678Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC3678 Symbol Conditions 2SC3678Unit Unit0.24.80.415.6VCBO 900 ICBO VCB=800V 100maxV A 0.19.6 2.0VCEO 800

0.11. Size:218K nell
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RoHS 2SC3679B RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor(High voltage switching transistor)5A/800V/100W15.60.44.80.29.62.00.13.20,1TO-3P(B)23+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 High-speed switchingB C E High collector to base voltage VCBO Satisfactory linearity of fow

0.12. Size:185K inchange semiconductor
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3677DESCRIPTIONLow Collector Saturation VoltageHigh breakdown voltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage amplifierHigh-voltage switching applicationsDynamis focus applicationsABSOLUTE

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isc Silicon NPN Power Transistor 2SC3679DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

0.14. Size:199K inchange semiconductor
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isc Silicon NPN Power Transistor 2SC3678DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

0.15. Size:183K inchange semiconductor
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3676DESCRIPTIONLow Collector Saturation VoltageHigh breakdown voltageSmall CobGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage amplifierHigh-voltage switching applicationsDynamis focus applicationsABSOLUTE MAXIMUM RAT

0.16. Size:184K inchange semiconductor
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3675DESCRIPTIONLow Collector Saturation VoltageHigh breakdown voltageSmall CobGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage amplifierHigh-voltage switching applicationsDynamis focus applicationsABSOLUTE MAXIMUM RAT

Otros transistores... 2SC3668Y , 2SC3669 , 2SC3669O , 2SC3669Y , 2SC366G , 2SC366GO , 2SC366GR , 2SC366GY , S9013 , 2SC3670 , 2SC3670A , 2SC3670B , 2SC3670C , 2SC3670D , 2SC3671 , 2SC3671A , 2SC3671B .