2SC3682 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number EN1939B NPN Triple Diffused Planar Silicon Transistor 2SC3687 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Applications Package Dimensions Ultrahigh-definition color display horizontal deflec- unit mm tion output. 2022A [2SC3687] Features Fast speed (tf typ=100ns). High breakdown voltage (VCBO=1500V). High reliability (

Ordering number EN1937A NPN Triple Diffused Planar Silicon Transistor 2SC3685 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Applications Package Dimensions Ultrahigh-definition color display horizontal deflec- unit mm tion output. 2022A [2SC3685] Features Fast speed (tf typ=100ns). High breakdown voltage (VCBO=1500V). High reliability (

Ordering number EN1855A NPN Epitaxial Planar Silicon Transistor 2SC3689 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers, unit mm muting circuits. 2018A [2SC3689] Features Small Cob (Cob=1.5pF typ). Very small-sized package permitting 2SC3689-used sets to be made smaller, sl

Ordering number EN1938A NPN Triple Diffused Planar Silicon Transistor 2SC3686 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Applications Package Dimensions Ultrahigh-definition color display horizontal deflec- unit mm tion output. 2022A [2SC3686] Features Fast speed (tf typ=100ns). High breakdown voltage (VCBO=1500V). High reliability (

Ordering number EN1940B NPN Triple Diffused Planar Silicon Transistor 2SC3688 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Applications Package Dimensions Ultrahigh-definition color display horizontal deflec- unit mm tion output. 2022A [2SC3688] Features Fast speed (tf=100ns typ). High breakdown voltage (VCBO=1500V). High reliability (

JMnic Product Specification Silicon NPN Power Transistors 2SC3685 DESCRIPTION With TO-3PN package High breakdown voltage High reliability Fast speed APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3686 ESCRIPTION High breakdown voltage High reliability (adoption of HVP process). Fast speed Adoption of MBIT process. With TO-3PN package APPLICATIONS Ultrahigh-definition color display horizontal deflection output. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting ba

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3680 ESCRIPTION High Voltage Switching Transistor With TO-3PN package APPLICATIONS Switching Regulator General Purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PA

JMnic Product Specification Silicon NPN Power Transistors 2SC3688 DESCRIPTION With TO-3PN package High breakdown voltage High speed APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute m

2SC3680 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC3680 Symbol Conditions 2SC3680 Unit Unit 0.2 4.8 0.4 15.6 VCBO 900 ICBO VCB=800V 100max A 2.0 0.1 V 9.6 VCEO 800

SMD Type Transistors NPN Transistors 2SC3689 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Colle

isc Silicon NPN Power Transistor 2SC3685 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition color display horizontal deflection output applications. ABSOLUTE MAXIMUM R

isc Silicon NPN Power Transistor 2SC3686 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition color display horizontal deflection output applications. ABSOLUTE MAXIMUM R

isc Silicon NPN Power Transistor 2SC3680 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SC3688 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition color display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA