2SC3690 Todos los transistores

 ..1. Size:201K  inchange semiconductor
 2sc3690.pdf

isc Silicon NPN Power Transistor 2SC3690 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 3A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 8.1. Size:27K  jmnic
 2sc3694.pdf

Power Transistors www.jmnic.com 2SC3694 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 15 A PC Collector power dissipa

 8.2. Size:303K  jmnic
 2sc3691.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3691 DESCRIPTION With TO-220Fa package Large current ,high speed Low saturation voltage APPLICATIONS Designed for high speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO C

 8.3. Size:29K  jmnic
 2sc3692.pdf

Power Transistors www.jmnic.ocm 2SC3692 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 7 A PC Collector power dissipat

 8.4. Size:28K  jmnic
 2sc3693.pdf

Power Transistors www.jmnic.com 2SC3693 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 10 A PC Collector power dissipa

 8.5. Size:203K  inchange semiconductor
 2sc3694.pdf

isc Silicon NPN Power Transistor 2SC3694 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 12A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 8.6. Size:206K  inchange semiconductor
 2sc3691.pdf

isc Silicon NPN Power Transistor 2SC3691 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 4A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 8.7. Size:205K  inchange semiconductor
 2sc3692.pdf

isc Silicon NPN Power Transistor 2SC3692 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 6A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 8.8. Size:207K  inchange semiconductor
 2sc3693.pdf

isc Silicon NPN Power Transistor 2SC3693 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 8A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY