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2SC369G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC369G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar 2SC369G

 

2SC369G Datasheet (PDF)

 8.1. Size:27K  jmnic
2sc3694.pdf

2SC369G

Power Transistors www.jmnic.com 2SC3694 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 15 A PC Collector power dissipa

 8.2. Size:303K  jmnic
2sc3691.pdf

2SC369G
2SC369G

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC3691 DESCRIPTION With TO-220Fa package Large current ,high speed Low saturation voltage APPLICATIONS Designed for high speed and power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO C

 8.3. Size:29K  jmnic
2sc3692.pdf

2SC369G

Power Transistors www.jmnic.ocm 2SC3692 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 7 A PC Collector power dissipat

 8.4. Size:28K  jmnic
2sc3693.pdf

2SC369G

Power Transistors www.jmnic.com 2SC3693 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 10 A PC Collector power dissipa

 8.5. Size:203K  inchange semiconductor
2sc3694.pdf

2SC369G
2SC369G

isc Silicon NPN Power Transistor 2SC3694DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 12ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

 8.6. Size:206K  inchange semiconductor
2sc3691.pdf

2SC369G
2SC369G

isc Silicon NPN Power Transistor 2SC3691DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 4ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

 8.7. Size:205K  inchange semiconductor
2sc3692.pdf

2SC369G
2SC369G

isc Silicon NPN Power Transistor 2SC3692DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 6ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

 8.8. Size:201K  inchange semiconductor
2sc3690.pdf

2SC369G
2SC369G

isc Silicon NPN Power Transistor 2SC3690DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 3ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

 8.9. Size:207K  inchange semiconductor
2sc3693.pdf

2SC369G
2SC369G

isc Silicon NPN Power Transistor 2SC3693DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 8ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: AC351

 

 
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History: AC351

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